Issued Patents All Time
Showing 51–75 of 289 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9443949 | Techniques for multiple gate workfunctions for a nanowire CMOS technology | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2016-09-13 |
| 9443951 | Embedded planar source/drain stressors for a finFET including a plurality of fins | Josephine B. Chang, Paul Chang, Michael A. Guillorn | 2016-09-13 |
| 9437613 | Multiple VT in III-V FETs | Josephine B. Chang, Isaac Lauer, Amlan Majumdar | 2016-09-06 |
| 9437443 | Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides | Markus Brink, Michael A. Guillorn, Sebastian U. Engelmann, Hiroyuki Miyazoe, Adam M. Pyzyna | 2016-09-06 |
| 9397199 | Methods of forming multi-Vt III-V TFET devices | Unoh Kwon, Siddarth A. Krishnan, Vijay Narayanan | 2016-07-19 |
| 9391163 | Stacked planar double-gate lamellar field-effect transistor | Josephine B. Chang, Michael A. Guillorn, Gen P. Lauer, Isaac Lauer | 2016-07-12 |
| 9390980 | III-V compound and germanium compound nanowire suspension with germanium-containing release layer | Guy M. Cohen, Isaac Lauer, Alexander Reznicek | 2016-07-12 |
| 9373638 | Complementary metal-oxide silicon having silicon and silicon germanium channels | Gen P. Lauer, Isaac Lauer, Alexander Reznicek | 2016-06-21 |
| 9368599 | Graphene/nanostructure FET with self-aligned contact and gate | Josephine B. Chang, Isaac Lauer | 2016-06-14 |
| 9368574 | Nanowire field effect transistor with inner and outer gates | Anirban Basu, Guy M. Cohen, Amlan Majumdar | 2016-06-14 |
| 9362354 | Tuning gate lengths in semiconductor device structures | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2016-06-07 |
| 9343142 | Nanowire floating gate transistor | Sarunya Bangsaruntip, Guy M. Cohen, Amlan Majumdar | 2016-05-17 |
| 9337309 | Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels | Anirban Basu, Amlan Majumdar | 2016-05-10 |
| 9337255 | Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels | Anirban Basu, Amlan Majumdar | 2016-05-10 |
| 9324801 | Nanowire FET with tensile channel stressor | Isaac Lauer, Chung-Hsun Lin | 2016-04-26 |
| 9299615 | Multiple VT in III-V FETs | Josephine B. Chang, Isaac Lauer, Amlan Majumdar | 2016-03-29 |
| 9287360 | III-V nanowire FET with compositionally-graded channel and wide-bandgap core | Anirban Basu, Guy M. Cohen, Amlan Majumdar | 2016-03-15 |
| 9281397 | Semiconductor device including an asymmetric feature | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2016-03-08 |
| 9272233 | Nano-filter and method of forming same, and method of filtration | Brent A. Anderson, Andres Bryant, Edward J. Nowak | 2016-03-01 |
| 9263550 | Gate to diffusion local interconnect scheme using selective replacement gate flow | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2016-02-16 |
| 9263276 | High-k/metal gate transistor with L-shaped gate encapsulation layer | Renee T. Mo, Wesley C. Natzle, Vijay Narayanan | 2016-02-16 |
| 9263260 | Nanowire field effect transistor with inner and outer gates | Anirban Basu, Guy M. Cohen, Amlan Majumdar | 2016-02-16 |
| 9252018 | High-k/metal gate transistor with L-shaped gate encapsulation layer | Renee T. Mo, Wesley C. Natzle, Vijay Narayanan | 2016-02-02 |
| 9230989 | Hybrid CMOS nanowire mesh device and FINFET device | Josephine B. Chang, Leland Chang, Chung-Hsun Lin | 2016-01-05 |
| 9224866 | Suspended body field effect transistor | Anirban Basu, Guy M. Cohen, Amlan Majumdar | 2015-12-29 |