Issued Patents All Time
Showing 101–125 of 289 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8928083 | Diode structure and method for FINFET technologies | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2015-01-06 |
| 8928064 | Gate stack of boron semiconductor alloy, polysilicon and high-K gate dielectric for low voltage applications | Martin M. Frank, Isaac Lauer | 2015-01-06 |
| 8921825 | Nanowire field effect transistor device | Sarunya Bangsaruntip, Guy M. Cohen | 2014-12-30 |
| 8917547 | Complementary SOI lateral bipolar for SRAM in a CMOS platform | Jin Cai, Leland Chang | 2014-12-23 |
| 8901659 | Tapered nanowire structure with reduced off current | Sarunya Bangsaruntip | 2014-12-02 |
| 8901655 | Diode structure for gate all around silicon nanowire technologies | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2014-12-02 |
| 8900952 | Gate stack including a high-k gate dielectric that is optimized for low voltage applications | Martin M. Frank, Isaac Lauer | 2014-12-02 |
| 8900959 | Non-replacement gate nanomesh field effect transistor with pad regions | Josephine B. Chang, Paul Chang, Isaac Lauer | 2014-12-02 |
| 8901616 | Gate stack including a high-K gate dielectric that is optimized for low voltage applications | Martin M. Frank, Isaac Lauer | 2014-12-02 |
| 8878298 | Multiple Vt field-effect transistor devices | Josephine B. Chang, Leland Chang, Renee T. Mo, Vijay Narayanan | 2014-11-04 |
| 8871576 | Silicon nanotube MOSFET | Daniel Tekleab, Hung H. Tran, Dureseti Chidambarrao | 2014-10-28 |
| 8872241 | Multi-direction wiring for replacement gate lines | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2014-10-28 |
| 8865531 | Multi-direction wiring for replacement gate lines | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2014-10-21 |
| 8866266 | Silicon nanotube MOSFET | Daniel Tekleab, Hung H. Tran, Dureseti Chidambarrao | 2014-10-21 |
| 8859410 | Gate stack of boron semiconductor alloy, polysilicon and high-k gate dielectric for low voltage applications | Martin M. Frank, Isaac Lauer | 2014-10-14 |
| 8853790 | Semiconductor nanowire structure reusing suspension pads | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2014-10-07 |
| 8835997 | Low extension dose implants in SRAM fabrication | Leland Chang, Chung-Hsun Lin, Shih-Hsien Lo | 2014-09-16 |
| 8836087 | Gap-fill keyhole repair using printable dielectric material | Paul Chang, Josephine B. Chang, Michael A. Guillorn | 2014-09-16 |
| 8835191 | Nanowire stress sensors and stress sensor integrated circuits, design structures for a stress sensor integrated circuit, and related methods | Andres Bryant, Oki Gunawan, Shih-Hsien Lo | 2014-09-16 |
| 8835231 | Methods of forming contacts for nanowire field effect transistors | Sarunya Bangsaruntip, Guy M. Cohen, Shreesh Narasimha | 2014-09-16 |
| 8829625 | Nanowire FET with trapezoid gate structure | Sarunya Bangsaruntip, Sebastian U. Engelmann, Ying Zhang | 2014-09-09 |
| 8822278 | Asymmetric FET formed through use of variable pitch gate for use as logic device and test structure | Josephine B. Chang, Chung-Hsun Lin, Isaac Lauer | 2014-09-02 |
| 8822295 | Low extension dose implants in SRAM fabrication | Leland Chang, Chung-Hsun Lin, Shih-Hsien Lo | 2014-09-02 |
| 8823064 | Asymmetric FET formed through use of variable pitch gate for use as logic device and test structure | Josephine B. Chang, Chung-Hsun Lin, Isaac Lauer | 2014-09-02 |
| 8816327 | Nanowire efuses | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2014-08-26 |