Issued Patents All Time
Showing 126–150 of 289 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8809957 | Nanowire FET and FinFET hybrid technology | Sarunya Bangsaruntip, Josephine B. Chang, Leland Chang | 2014-08-19 |
| 8809131 | Replacement gate fin first wire last gate all around devices | Sarunya Bangsaruntip, Josephine B. Chang, Isaac Lauer | 2014-08-19 |
| 8802527 | Gate electrode optimized for low voltage operation | Martin M. Frank, Isaac Lauer | 2014-08-12 |
| 8802535 | Doped core trigate FET structure and method | Sarunya Bangsaruntip, Siyuranga O. Koswatta, Chung-Hsun Lin | 2014-08-12 |
| 8796742 | Non-replacement gate nanomesh field effect transistor with epitixially grown source and drain | Josephine B. Chang, Paul Chang, Isaac Lauer | 2014-08-05 |
| 8785981 | Non-replacement gate nanomesh field effect transistor with pad regions | Josephine B. Chang, Paul Chang, Isaac Lauer | 2014-07-22 |
| 8778768 | Non-replacement gate nanomesh field effect transistor with epitixially grown source and drain | Josephine B. Chang, Paul Chang, Issac Lauer | 2014-07-15 |
| 8778759 | Gate electrode optimized for low voltage operation | Martin M. Frank, Isaac Lauer | 2014-07-15 |
| 8772755 | Directionally etched nanowire field effect transistors | Sarunya Bangsaruntip, Guy M. Cohen | 2014-07-08 |
| 8753932 | Asymmetric silicon-on-insulator SRAM cell | Leland Chang | 2014-06-17 |
| 8754403 | Epitaxial source/drain contacts self-aligned to gates for deposited FET channels | Josephine B. Chang, Paul Chang, Vijay Narayanan | 2014-06-17 |
| 8741722 | Formation of dividers between gate ends of field effect transistor devices | Josephine B. Chang, Paul Chang, Michael A. Guillorn | 2014-06-03 |
| 8742511 | Double gate planar field effect transistors | Josephine B. Chang, Leland Chang, Chung-Hsun Lin | 2014-06-03 |
| 8741730 | Bi-directional self-aligned FET capacitor | Leland Chang, Brian L. Ji, Chung-Hsun Lin | 2014-06-03 |
| 8722472 | Hybrid CMOS nanowire mesh device and FINFET device | Josephine B. Chang, Leland Chang, Chung-Hsun Lin | 2014-05-13 |
| 8723162 | Nanowire tunnel field effect transistors | Sarunya Bangsaruntip, Isaac Lauer, Amlan Majumdar | 2014-05-13 |
| 8716810 | Selective floating body SRAM cell | Josephine B. Chang, Leland Chang, Steven J. Koester | 2014-05-06 |
| 8716072 | Hybrid CMOS technology with nanowire devices and double gated planar devices | Sarunya Bangsaruntip, Josephine B. Chang, Leland Chang | 2014-05-06 |
| 8709888 | Hybrid CMOS nanowire mesh device and PDSOI device | Josephine B. Chang, Leland Chang, Chung-Hsun Lin | 2014-04-29 |
| 8703576 | Gap-fill keyhole repair using printable dielectric material | Paul Chang, Josephine B. Chang, Michael A. Guillorn | 2014-04-22 |
| 8698128 | Gate-all around semiconductor nanowire FET's on bulk semicoductor wafers | Josephine B. Chang, Isaac Lauer, Shreesh Narasimha | 2014-04-15 |
| 8686506 | High performance devices and high density devices on single chip | Leland Chang, Isaac Lauer | 2014-04-01 |
| 8685823 | Nanowire field effect transistor device | Sarunya Bangsaruntip, Guy M. Cohen | 2014-04-01 |
| 8680623 | Techniques for enabling multiple Vt devices using high-K metal gate stacks | Martin M. Frank, Arvind Kumar, Vijay Narayanan, Vamsi K. Paruchuri | 2014-03-25 |
| 8680589 | Omega shaped nanowire field effect transistors | Sarunya Bangsaruntip, Josephine B. Chang, Guy M. Cohen | 2014-03-25 |