Issued Patents All Time
Showing 151–175 of 289 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8673698 | Generation of multiple diameter nanowire field effect transistors | Sarunya Bangsaruntip, Guy M. Cohen | 2014-03-18 |
| 8673719 | DRAM with a nanowire access transistor | Josephine B. Chang | 2014-03-18 |
| 8673731 | Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devices | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2014-03-18 |
| 8674342 | Pad-less gate-all around semiconductor nanowire FETs on bulk semiconductor wafers | Josephine B. Chang, Isaac Lauer, Shreesh Narasimha | 2014-03-18 |
| 8669167 | Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2014-03-11 |
| 8669615 | Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2014-03-11 |
| 8659084 | Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devices | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2014-02-25 |
| 8659006 | Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devices | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2014-02-25 |
| 8658518 | Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devices | Josephine B. Chang, Isaac Lauer, Chung-Hsun Lin | 2014-02-25 |
| 8648330 | Nanowire field effect transistors | Sarunya Bangsaruntip, Guy M. Cohen, Amlan Majumdar | 2014-02-11 |
| 8643107 | Body-tied asymmetric N-type field effect transistor | Chung-Hsun Lin, Josephine B. Chang, Leland Chang | 2014-02-04 |
| 8637371 | Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the same | Josephine B. Chang, Paul Chang, Michael A. Guillorn, Chung-Hsun Lin | 2014-01-28 |
| 8619465 | 8-transistor SRAM cell design with inner pass-gate junction diodes | Leland Chang, Isaac Lauer, Chung-Hsun Lin | 2013-12-31 |
| 8618636 | Fin bipolar transistors having self-aligned collector and emitter regions | Josephine B. Chang, Gen P. Lauer, Isaac Lauer | 2013-12-31 |
| 8617957 | Fin bipolar transistors having self-aligned collector and emitter regions | Josephine B. Chang, Gen P. Lauer, Isaac Lauer | 2013-12-31 |
| 8617412 | Nano-filter and method of forming same, and method of filtration | Brent A. Anderson, Andres Bryant, Edward J. Nowak | 2013-12-31 |
| 8614492 | Nanowire stress sensors, stress sensor integrated circuits, and design structures for a stress sensor integrated circuit | Andres Bryant, Oki Gunawan, Shih-Hsien Lo | 2013-12-24 |
| 8610181 | V-groove source/drain MOSFET and process for fabricating same | Michael A. Guillorn, Gen P. Lauer, Isaac Lauer | 2013-12-17 |
| 8603868 | V-groove source/drain MOSFET and process for fabricating same | Michael A. Guillorn, Gen P. Lauer, Isaac Lauer | 2013-12-10 |
| 8597991 | Embedded silicon germanium n-type filed effect transistor for reduced floating body effect | Leland Chang, Isaac Lauer, Chung-Hsun Lin | 2013-12-03 |
| 8592295 | Gate-all around semiconductor nanowire FETs on bulk semiconductor wafers | Josephine B. Chang, Isaac Lauer, Shreesh Narasimha | 2013-11-26 |
| 8586966 | Contacts for nanowire field effect transistors | Sarunya Bangsaruntip, Guy M. Cohen, Shreesh Narasimha | 2013-11-19 |
| 8586455 | Preventing shorting of adjacent devices | Josephine B. Chang, Michael A. Guillorn, Balasubramanian Pranatharthiharan | 2013-11-19 |
| 8586454 | Two-step hydrogen annealing process for creating uniform non-planar semiconductor devices at aggressive pitch | Sarunya Bangsaruntip | 2013-11-19 |
| 8580624 | Nanowire FET and finFET hybrid technology | Sarunya Bangsaruntip, Josephine B. Chang, Leland Chang | 2013-11-12 |