Issued Patents All Time
Showing 51–75 of 131 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8735244 | Semiconductor device devoid of an interfacial layer and methods of manufacture | Min Dai | 2014-05-27 |
| 8728925 | Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG) | William K. Henson, Unoh Kwon | 2014-05-20 |
| 8643115 | Structure and method of Tinv scaling for high κ metal gate technology | Dechao Guo, Siddarth A. Krishnan, Unoh Kwon, Carl Radens, Shahab Siddiqui | 2014-02-04 |
| 8629014 | Replacement metal gate structures for effective work function control | Unoh Kwon, Ravikumar Ramachandran | 2014-01-14 |
| 8592325 | Insulating layers on different semiconductor materials | Joseph F. Shepard, Jr., Siddarth A. Krishnan, Rishikesh Krishnan | 2013-11-26 |
| 8581351 | Replacement gate with reduced gate leakage current | Takashi Ando, Rishikesh Krishnan, Siddarth A. Krishnan, Unoh Kwon, Keith Kwong Hon Wong | 2013-11-12 |
| 8575709 | High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof | Huiming Bu, Wei He, William K. Henson, Siddarth A. Krishnan, Unoh Kwon +2 more | 2013-11-05 |
| 8575655 | Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering | Stephen W. Bedell, Ashima B. Chakravarti, Judson R. Holt, Dominic J. Schepis | 2013-11-05 |
| 8552502 | Structure and method to make replacement metal gate and contact metal | Zhengwen Li, Unoh Kwon, Filippos Papadatos, Andrew H. Simon, Keith Kwong Hon Wong | 2013-10-08 |
| 8546211 | Replacement gate having work function at valence band edge | Keith Kwong Hon Wong, Unoh Kwon | 2013-10-01 |
| 8518766 | Method of forming switching device having a molybdenum oxynitride metal gate | Nestor A. Bojarczuk, Matthew W. Copel, Supratik Guha, Richard A. Haight, Vijay Narayanan +2 more | 2013-08-27 |
| 8507992 | High-K metal gate CMOS | Renee T. Mo, Huiming Bu, William K. Henson, Mukesh V. Khare, Vijay Narayanan | 2013-08-13 |
| 8492290 | Fabrication of silicon oxide and oxynitride having sub-nanometer thickness | Min Dai, Joseph F. Shepard, Jr., Shahab Siddiqui, Jinping Liu | 2013-07-23 |
| 8440547 | Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering | Stephen W. Bedell, Ashima B. Chakravarti, Judson R. Holt, Dominic J. Schepis | 2013-05-14 |
| 8436427 | Dual metal and dual dielectric integration for metal high-K FETs | Wiliam K. Henson, Rashmi Jha, Yue Liang, Ravikumar Ramachandran, Richard S. Wise | 2013-05-07 |
| 8420473 | Replacement gate devices with barrier metal for simultaneous processing | Takashi Ando, Siddarth A. Krishnan, Unoh Kwon, Vijay Narayanan | 2013-04-16 |
| 8383483 | High performance CMOS circuits, and methods for fabricating same | John C. Arnold, Glenn A. Biery, Alessandro C. Callegari, Tze-Chiang Chen, Bruce B. Doris +7 more | 2013-02-26 |
| 8373239 | Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric | Shahab Siddiqui, Carl Radens | 2013-02-12 |
| 8354309 | Method of providing threshold voltage adjustment through gate dielectric stack modification | Brian J. Greene, Shu-Jen Han, William K. Henson, Yue Liang, Edward P. Maciejewski +3 more | 2013-01-15 |
| 8350341 | Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG) | William K. Henson, Unoh Kwon | 2013-01-08 |
| 8318565 | High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof | Huiming Bu, Wei He, William K. Henson, Siddarth A. Krishnan, Unoh Kwon +2 more | 2012-11-27 |
| 8241981 | Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor | Rishikesh Krishnan, Joseph F. Shepard, Jr., Christian Lavoie, Dong-Ick Lee, Oh-Jung Kwon +2 more | 2012-08-14 |
| 8232612 | Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances | James W. Adkisson, Jeffrey P. Gambino, Renee T. Mo, Naim Moumen | 2012-07-31 |
| 8232606 | High-K dielectric and metal gate stack with minimal overlap with isolation region | William K. Henson, Renee T. Mo, Jeffrey W. Sleight | 2012-07-31 |
| 8232148 | Structure and method to make replacement metal gate and contact metal | Zhengwen Li, Unoh Kwon, Filippos Papadatos, Andrew H. Simon, Keith Kwong Hon Wong | 2012-07-31 |