Issued Patents All Time
Showing 26–50 of 141 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9722052 | Fin cut without residual fin defects | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-08-01 |
| 9679763 | Silicon-on-insulator fin field-effect transistor device formed on a bulk substrate | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-06-13 |
| 9673108 | Fabrication of higher-K dielectrics | Michael P. Chudzik, Min Dai, Shahab Siddiqui | 2017-06-06 |
| 9660059 | Fin replacement in a field-effect transistor | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-05-23 |
| 9647119 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2017-05-09 |
| 9634142 | Method for improving boron diffusion in a germanium-rich fin through germanium concentration reduction in fin S/D regions by thermal mixing | Alexander Reznicek, Pouya Hashemi, Kangguo Cheng | 2017-04-25 |
| 9601624 | SOI based FINFET with strained source-drain regions | Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana | 2017-03-21 |
| 9590077 | Local SOI fins with multiple heights | Kangguo Cheng, Joel P. de Souza, Ali Khakifirooz, Alexander Reznicek | 2017-03-07 |
| 9525027 | Lateral bipolar junction transistor having graded SiGe base | Pouya Hashemi, Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek | 2016-12-20 |
| 9514995 | Implant-free punch through doping layer formation for bulk FinFET structures | Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana | 2016-12-06 |
| 9478642 | Semiconductor junction formation | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2016-10-25 |
| 9478425 | Fabrication of higher-k dielectrics | Michael P. Chudzik, Min Dai, Shahab Siddiqui | 2016-10-25 |
| 9472470 | Methods of forming FinFET with wide unmerged source drain EPI | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-10-18 |
| 9472460 | Uniform depth fin trench formation | Alexander Reznicek, Kangguo Cheng, Ali Khakifirooz, Pouya Hashemi | 2016-10-18 |
| 9466602 | Embedded dynamic random access memory field effect transistor device | Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek | 2016-10-11 |
| 9461052 | Embedded dynamic random access memory field effect transistor device | Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek | 2016-10-04 |
| 9455141 | Silicon-germanium fin of height above critical thickness | Kanggou Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-09-27 |
| 9450079 | FinFET having highly doped source and drain regions | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-09-20 |
| 9443873 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2016-09-13 |
| 9391198 | Strained semiconductor trampoline | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2016-07-12 |
| 9390925 | Silicon—germanium (SiGe) fin formation | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-07-12 |
| 9385023 | Method and structure to make fins with different fin heights and no topography | Kangguo Cheng, Joel P. de Souza, Ali Khakifirooz, Alexander Reznicek | 2016-07-05 |
| 9368512 | Double diamond shaped unmerged epitaxy for tall fins in tight pitch | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2016-06-14 |
| 9368492 | Forming fins of different materials on the same substrate | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-06-14 |
| 9343550 | Silicon-on-nothing FinFETs | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-05-17 |