| 12224008 |
Non-volatile static random access memory |
Mohammed Aftab Baig, Siao-Shan Huang, Fu-Yuan Chang |
2025-02-11 |
|
| 11785778 |
Ferroelectric memory and memory array device with multiple independently controlled gates |
Chi-Jen Lin |
2023-10-10 |
|
| 11728428 |
Dielectric isolated fin with improved fin profile |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim |
2023-08-15 |
$8,098,000 |
| 10903208 |
Distributed decoupling capacitor |
Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi |
2021-01-26 |
$1,788,000 |
| 10892364 |
Dielectric isolated fin with improved fin profile |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim |
2021-01-12 |
$3,912,000 |
| 10886385 |
Semiconductor structures having increased channel strain using fin release in gate regions |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2021-01-05 |
$2,293,000 |
| 10734477 |
FinFET with reduced parasitic capacitance |
Kangguo Cheng, Xin Miao, Tenko Yamashita |
2020-08-04 |
$3,150,000 |
| 10622451 |
Flash memory with multiple control gates and flash memory array device made thereof |
Yi-Chi WANG, Huai Kuan Zeng |
2020-04-14 |
|
| 10593663 |
Distributed decoupling capacitor |
Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi |
2020-03-17 |
$1,423,000 |
| 10546955 |
Dielectric isolated fin with improved fin profile |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim |
2020-01-28 |
$1,679,000 |
| 10347752 |
Semiconductor structures having increased channel strain using fin release in gate regions |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2019-07-09 |
$2,201,000 |
| 10262991 |
Distributed decoupling capacitor |
Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi |
2019-04-16 |
$3,839,000 |
| 10243042 |
FinFET with reduced parasitic capacitance |
Kangguo Cheng, Xin Miao, Tenko Yamashita |
2019-03-26 |
$2,148,000 |
| 10177223 |
FinFET with reduced parasitic capacitance |
Kangguo Cheng, Xin Miao, Tenko Yamashita |
2019-01-08 |
$2,287,000 |
| 10153157 |
P-FET with graded silicon-germanium channel |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2018-12-11 |
$6,670,000 |
| 10056474 |
Semiconductor structures having increased channel strain using fin release in gate regions |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2018-08-21 |
$2,787,000 |
| 9997540 |
Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2018-06-12 |
$1,886,000 |
| 9966387 |
Strain release in pFET regions |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2018-05-08 |
$5,367,000 |
| 9954083 |
Semiconductor structures having increased channel strain using fin release in gate regions |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2018-04-24 |
$2,845,000 |
| 9917188 |
Dielectric isolated fin with improved fin profile |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim |
2018-03-13 |
$2,527,000 |
| 9825093 |
FinFET PCM access transistor having gate-wrapped source and drain regions |
Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges |
2017-11-21 |
$10,021,000 |
| 9825094 |
FinFET PCM access transistor having gate-wrapped source and drain regions |
Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges |
2017-11-21 |
$10,021,000 |
| 9786737 |
FinFET with reduced parasitic capacitance |
Kangguo Cheng, Xin Miao, Tenko Yamashita |
2017-10-10 |
$2,342,000 |
| 9761610 |
Strain release in PFET regions |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2017-09-12 |
$1,776,000 |
| 9653541 |
Structure and method to make strained FinFET with improved junction capacitance and low leakage |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2017-05-16 |
$2,370,000 |
