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Home › Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices

Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices

US Patent 9997540 · Granted Jun 12, 2018

Estimated economic value: $1,886,000 ⓘ

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