Issued Patents All Time
Showing 25 most recent of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11910731 | Embedded heater in a phase change memory material | Jin-Ping Han, Robert L. Bruce, Ching-Tzu Chen | 2024-02-20 |
| 11152378 | Reducing error rates with alpha particle protection | Daniel Stasiak, Hassan Naser, Michael J. Mueller, Kenneth P. Rodbell | 2021-10-19 |
| 10957780 | Non-uniform gate dielectric for U-shape MOSFET | Pranita Kerber, Effendi Leobandung | 2021-03-23 |
| 10468524 | Vertical field effect transistor with improved reliability | Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang | 2019-11-05 |
| 10438949 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang | 2019-10-08 |
| 10297688 | Vertical field effect transistor with improved reliability | Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang | 2019-05-21 |
| 10283504 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang | 2019-05-07 |
| 10256319 | Non-uniform gate dielectric for U-shape MOSFET | Pranita Kerber, Effendi Leobandung | 2019-04-09 |
| 10074652 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang | 2018-09-11 |
| 9853028 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang | 2017-12-26 |
| 9825094 | FinFET PCM access transistor having gate-wrapped source and drain regions | Chung H. Lam, Chung-Hsun Lin, Darsen D. Lu | 2017-11-21 |
| 9825093 | FinFET PCM access transistor having gate-wrapped source and drain regions | Chung H. Lam, Chung-Hsun Lin, Darsen D. Lu | 2017-11-21 |
| 9583624 | Asymmetric finFET memory access transistor | Chung H. Lam, Chung-Hsun Lin, Darsen D. Lu | 2017-02-28 |
| 9553173 | Asymmetric finFET memory access transistor | Chung H. Lam, Chung-Hsun Lin, Darsen D. Lu | 2017-01-24 |
| 9515171 | Radiation tolerant device structure | Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu | 2016-12-06 |
| 9064739 | Techniques for quantifying fin-thickness variation in FINFET technology | Wilfried Haensch, Chung-Hsun Lin, Kern Rim | 2015-06-23 |
| 9058441 | Methods for modeling of FinFET width quantization | Wilfried Ernest-August Haensch, Chung-Hsun Lin, Hailing Wang, Richard Q. Williams | 2015-06-16 |
| 9034715 | Method and structure for dielectric isolation in a fin field effect transistor | Yanfeng Wang, Dechao Guo, Darsen D. Lu, Gan Wang, Xin Wang | 2015-05-19 |
| 8993395 | Minimizing leakage current and junction capacitance in CMOS transistors by utilizing dielectric spacers | Dureseti Chidambarrao, Ramachandran Muralidhar, Viorel Ontalus | 2015-03-31 |
| 8940558 | Techniques for quantifying fin-thickness variation in FINFET technology | Wilfried Haensch, Chung-Hsun Lin, Kern Rim | 2015-01-27 |
| 8921939 | Stressed channel FET with source/drain buffers | Jeffrey B. Johnson, Ramachandran Muralidhar, Viorel Ontalus, Kai Xiu | 2014-12-30 |
| 8890256 | Structure for heavy ion tolerant device, method of manufacturing the same and structure thereof | Mark C. Hakey, Tak H. Ning, Henry H. K. Tang | 2014-11-18 |
| 8806419 | Apparatus for modeling of FinFET width quantization | Wilfried Ernest-August Haensch, Chung-Hsun Lin, Hailing Wang, Richard Q. Williams | 2014-08-12 |
| 8799848 | Methods for modeling of FinFET width quantization | Wilfried Ernest-August Haensch, Chung-Hsun Lin, Hailing Wang, Richard Q. Williams | 2014-08-05 |
| 8710588 | Implant free extremely thin semiconductor devices | Kangguo Cheng, Bruce B. Doris, Dechao Guo, Pranita Kulkarni, Ghavam G. Shahidi | 2014-04-29 |