Issued Patents All Time
Showing 26–40 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9583492 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2017-02-28 |
| 9583624 | Asymmetric finFET memory access transistor | Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges | 2017-02-28 |
| 9564439 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2017-02-07 |
| 9553173 | Asymmetric finFET memory access transistor | Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges | 2017-01-24 |
| 9548213 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim | 2017-01-17 |
| 9548386 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2017-01-17 |
| 9543323 | Strain release in PFET regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2017-01-10 |
| 9525027 | Lateral bipolar junction transistor having graded SiGe base | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis | 2016-12-20 |
| 9515171 | Radiation tolerant device structure | Bruce B. Doris, Ali Khakifirooz, Philip J. Oldiges | 2016-12-06 |
| 9455250 | Distributed decoupling capacitor | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2016-09-27 |
| 9362400 | Semiconductor device including dielectrically isolated finFETs and buried stressor | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2016-06-07 |
| 9299618 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2016-03-29 |
| 9276113 | Structure and method to make strained FinFET with improved junction capacitance and low leakage | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2016-03-01 |
| 9209065 | Engineered substrate and device for co-integration of strained silicon and relaxed silicon | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-12-08 |
| 9034715 | Method and structure for dielectric isolation in a fin field effect transistor | Yanfeng Wang, Dechao Guo, Philip J. Oldiges, Gan Wang, Xin Wang | 2015-05-19 |