Issued Patents All Time
Showing 51–75 of 462 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11069809 | Soi FinFET fins with recessed fins and epitaxy in source drain region | Alexander Reznicek, Shogo Mochizuki, Nicolas L. Breil, Oleg Gluschenkov | 2021-07-20 |
| 11056399 | Source and drain EPI protective spacer during single diffusion break formation | Yao Yao, Andrew M. Greene, Kangguo Cheng, Zhenxing Bi, Ruilong Xie | 2021-07-06 |
| 11056386 | Two-dimensional (2D) self-aligned contact (or via) to enable further device scaling | Junli Wang, Chun-Chen Yeh, Alexander Reznicek | 2021-07-06 |
| 11043451 | Electrical fuse and/or resistor structures | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2021-06-22 |
| 11038041 | Composite spacer enabling uniform doping in recessed fin devices | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2021-06-15 |
| 11024536 | Contact interlayer dielectric replacement with improved SAC cap retention | Adra Carr, Vimal Kamineni, Ruilong Xie, Andrew M. Greene, Nigel G. Cave | 2021-06-01 |
| 11011422 | Self-aligned wrap-around trench contacts | — | 2021-05-18 |
| 11011417 | Method and structure of metal cut | Su Chen Fan, Ruilong Xie, Andrew M. Greene | 2021-05-18 |
| 10998242 | Semiconductor device including dual trench epitaxial dual-liner contacts | Kangguo Cheng, Theodoras E. Standaert, Junli Wang | 2021-05-04 |
| 10998234 | Nanosheet bottom isolation and source or drain epitaxial growth | Ruilong Xie, Nicolas Loubet, Balasubramanian Pranatharthiharan | 2021-05-04 |
| 10998230 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2021-05-04 |
| 10991796 | Source/drain contact depth control | Lin Hu, Brian J. Greene, Kai Zhao, Daniel Jaeger, Keith H. Tabakman +1 more | 2021-04-27 |
| 10971601 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2021-04-06 |
| 10957761 | Electrical isolation for nanosheet transistor devices | Chun-Chen Yeh, Alexander Reznicek, Junli Wang | 2021-03-23 |
| 10943990 | Gate contact over active enabled by alternative spacer scheme and claw-shaped cap | Andrew M. Greene, Victor Chan, Gangadhara Raja Muthinti, Junli Wang, Kisik Choi +1 more | 2021-03-09 |
| 10930754 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2021-02-23 |
| 10916660 | Vertical transistor with a body contact for back-biasing | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2021-02-09 |
| 10916471 | Dual silicide liner flow for enabling low contact resistance | Praneet Adusumilli, Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2021-02-09 |
| 10903338 | Vertical FET with shaped spacer to reduce parasitic capacitance | Junli Wang, Kangguo Cheng, Theodorus E. Standaert | 2021-01-26 |
| 10896976 | Embedded source/drain structure for tall FinFet and method of formation | Kangguo Cheng, Ali Khakifirooz, Henry K. Utomo, Reinaldo Vega | 2021-01-19 |
| 10892181 | Semiconductor device with mitigated local layout effects | Huimei Zhou, Gen Tsutsui, Andrew M. Greene, Dechao Guo, Huiming Bu +1 more | 2021-01-12 |
| 10886363 | Metal-insulator-metal capacitor structure | Kangguo Cheng, Theodoras E. Standaert, Junli Wang | 2021-01-05 |
| 10872809 | Contact structures for integrated circuit products | Ruilong Xie, Lars Liebmann, Balasubramanian S. Pranatharthi Haran | 2020-12-22 |
| 10854733 | Composite spacer enabling uniform doping in recessed fin devices | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2020-12-01 |
| 10840345 | Source and drain contact cut last process to enable wrap-around-contact | Andrew M. Greene, Dechao Guo, Tenko Yamashita, Robert R. Robison, Ardasheir Rahman | 2020-11-17 |