Issued Patents All Time
Showing 51–75 of 548 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11690305 | Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material | Kangguo Cheng, Ruilong Xie, Carl Radens | 2023-06-27 |
| 11688775 | Method of forming first and second contacts self-aligned top source/drain region of a vertical field-effect transistor | Kangguo Cheng, Brent A. Anderson | 2023-06-27 |
| 11683998 | Vertical phase change bridge memory cell | Kangguo Cheng, Carl Radens, Ruilong Xie | 2023-06-20 |
| 11682674 | Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices | Zhenxing Bi, Kangguo Cheng | 2023-06-20 |
| 11682582 | Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors | Kangguo Cheng, Zhenxing Bi, Dexin Kong | 2023-06-20 |
| 11677026 | Transistor having wrap-around source/drain contacts | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2023-06-13 |
| 11665987 | Integrated switch using stacked phase change materials | Kangguo Cheng, Dexin Kong, Zheng Xu | 2023-05-30 |
| 11658062 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Eric G. Liniger, Sanjay C. Mehta, Son V. Nguyen +2 more | 2023-05-23 |
| 11652156 | Nanosheet transistor with asymmetric gate stack | Ruilong Xie, Carl Radens, Kangguo Cheng, Dechao Guo, Tao Li +1 more | 2023-05-16 |
| 11637179 | Airgap vertical transistor without structural collapse | Kangguo Cheng, Chanro Park, Ruilong Xie | 2023-04-25 |
| 11637238 | Resistive random-access memory cell and manufacturing method thereof | Kangguo Cheng, Chanro Park, Ruilong Xie | 2023-04-25 |
| 11631617 | Scalable device for FINFET technology | Ruilong Xie, Kangguo Cheng, Chanro Park | 2023-04-18 |
| 11626287 | Semiconductor device with improved contact resistance and via connectivity | Chanro Park, Kangguo Cheng, Ruilong Xie | 2023-04-11 |
| 11594676 | Resistive random-access memory | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2023-02-28 |
| 11588104 | Resistive memory with vertical transport transistor | Kangguo Cheng, Carl Radens, Ruilong Xie | 2023-02-21 |
| 11545624 | Phase change memory cell resistive liner | Kangguo Cheng, Zuoguang Liu, Ruilong Xie | 2023-01-03 |
| 11538939 | Controlled bottom junctions | Brent A. Anderson, Ruilong Xie, Kangguo Cheng | 2022-12-27 |
| 11527446 | Transistor having strain-inducing anchors and a strain-enhancing suspended channel | Kangguo Cheng, Julien Frougier, Ruilong Xie | 2022-12-13 |
| 11495688 | Source and drain epitaxy and isolation for gate structures | Kangguo Cheng, Peng Xu, Zhenxing Bi | 2022-11-08 |
| 11482612 | Vertical transistor having bottom spacers on source/drain regions with different heights along junction region | Shogo Mochizuki, Kangguo Cheng, Choonghyun Lee | 2022-10-25 |
| 11476362 | Vertical transistors with various gate lengths | Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki | 2022-10-18 |
| 11456181 | Cross-bar fin formation | Kangguo Cheng, Chanro Park, Ruilong Xie | 2022-09-27 |
| 11453911 | DNA sequencing with stacked nanopores | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2022-09-27 |
| 11444083 | Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths | Kangguo Cheng, Peng Xu | 2022-09-13 |
| 11430879 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Kangguo Cheng | 2022-08-30 |