Issued Patents All Time
Showing 76–100 of 548 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11424343 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki | 2022-08-23 |
| 11398347 | Inductor with ferromagnetic cores | Kangguo Cheng, Geng Wang, Qintao Zhang | 2022-07-26 |
| 11380842 | Phase change memory cell with second conductive layer | Kangguo Cheng, Ruilong Xie, Junli Wang | 2022-07-05 |
| 11380778 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki | 2022-07-05 |
| 11362193 | Inverse T-shaped contact structures having air gap spacers | Kangguo Cheng, Choonghyun Lee, Heng Wu, Peng Xu | 2022-06-14 |
| 11355649 | Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2022-06-07 |
| 11355644 | Vertical field effect transistors with self aligned contacts | Yi Song, Kangguo Cheng | 2022-06-07 |
| 11355588 | Strained and unstrained semiconductor device features formed on the same substrate | Kangguo Cheng, Peng Xu | 2022-06-07 |
| 11349001 | Replacement gate cross-couple for static random-access memory scaling | Ruilong Xie, Carl Radens, Kangguo Cheng, Veeraraghavan S. Basker | 2022-05-31 |
| 11342230 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Choonghyun Lee, Heng Wu, Peng Xu | 2022-05-24 |
| 11335773 | Trench contact resistance reduction | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2022-05-17 |
| 11329143 | Nanosheet transistors with thin inner spacers and tight pitch gate | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2022-05-10 |
| 11322402 | Self-aligned top via scheme | Ruilong Xie, Chih-Chao Yang, Carl Radens, Kangguo Cheng | 2022-05-03 |
| 11316015 | Silicon germanium FinFET with low gate induced drain leakage current | Shogo Mochizuki, Kangguo Cheng, Choonghyun Lee | 2022-04-26 |
| 11315799 | Back end of line structures with metal lines with alternating patterning and metallization schemes | Ruilong Xie, Chanro Park, Chih-Chao Yang, Kangguo Cheng | 2022-04-26 |
| 11302799 | Method and structure for forming a vertical field-effect transistor | Peng Xu, Choonghyun Lee, Kangguo Cheng | 2022-04-12 |
| 11282838 | Stacked gate structures | Chen Zhang, Dechao Guo, Junli Wang, Ruilong Xie, Kangguo Cheng +5 more | 2022-03-22 |
| 11270768 | Failure prevention of chip power network | Zheng Xu, Kangguo Cheng, Dexin Kong | 2022-03-08 |
| 11264481 | Self-aligned source and drain contacts | Chanro Park, Kangguo Cheng, Ruilong Xie | 2022-03-01 |
| 11257934 | Fin field-effect transistors with enhanced strain and reduced parasitic capacitance | Kangguo Cheng, Choonghyun Lee, Shogo Mochizuki | 2022-02-22 |
| 11251288 | Nanosheet transistor with asymmetric gate stack | Ruilong Xie, Carl Radens, Kangguo Cheng, Dechao Guo, Tao Li +1 more | 2022-02-15 |
| 11244869 | Fabrication of logic devices and power devices on the same substrate | Kangguo Cheng, Liying Jiang, John G. Gaudiello | 2022-02-08 |
| 11227937 | Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors | Shogo Mochizuki, Choonghyun Lee, Kangguo Cheng | 2022-01-18 |
| 11217680 | Vertical field-effect transistor with T-shaped gate | Yi Song, Huimei Zhou, Kangguo Cheng, Ardasheir Rahman | 2022-01-04 |
| 11211452 | Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contacts | Ruilong Xie, Reinaldo Vega, Kangguo Cheng, Chanro Park | 2021-12-28 |