Issued Patents All Time
Showing 26–50 of 128 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11710768 | Hybrid diffusion break with EUV gate patterning | Eric R. Miller, Indira Seshadri, Julien Frougier, Veeraraghavan S. Basker | 2023-07-25 |
| 11695057 | Protective bilayer inner spacer for nanosheet devices | Yao Yao, Ruilong Xie, Veeraraghavan S. Basker | 2023-07-04 |
| 11688741 | Gate-all-around devices with isolated and non-isolated epitaxy regions for strain engineering | Julien Frougier, Jingyun Zhang, Sung-Dae Suk, Veeraraghavan S. Basker, Ruilong Xie | 2023-06-27 |
| 11688632 | Semiconductor device with linerless contacts | Alex Joseph Varghese, Marc A. Bergendahl, Dallas Lea, Matthew T. Shoudy, Yann Mignot +2 more | 2023-06-27 |
| 11552077 | Gate cut with integrated etch stop layer | Marc A. Bergendahl, Rajasekhar Venigalla | 2023-01-10 |
| 11443982 | Formation of trench silicide source or drain contacts without gate damage | Ruilong Xie, Laertis Economikos, Veeraraghavan S. Basker, Chanro Park, Hui Zang | 2022-09-13 |
| 11424367 | Wrap-around contacts including localized metal silicide | Eric R. Miller, Julien Frougier, Yann Mignot | 2022-08-23 |
| 11387319 | Nanosheet transistor device with bottom isolation | Ruilong Xie, Veeraraghavan S. Basker, Pietro Montanini | 2022-07-12 |
| 11315922 | Fin cut to prevent replacement gate collapse on STI | Balasubramanian Pranatharthiharan, Sivananda K. Kanakasabapathy, John R. Sporre | 2022-04-26 |
| 11309221 | Single metallization scheme for gate, source, and drain contact integration | Victor Chan, Gangadhara Raja Muthinti | 2022-04-19 |
| 11296226 | Transistor having wrap-around source/drain contacts and under-contact spacers | Yi Song, Praveen Joseph, Kangguo Cheng | 2022-04-05 |
| 11282962 | Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) | Huimei Zhou, Ruqiang Bao, Michael P. Belyansky, Gen Tsutsui | 2022-03-22 |
| 11282961 | Enhanced bottom dielectric isolation in gate-all-around devices | Julien Frougier, Ruilong Xie, Kangguo Cheng | 2022-03-22 |
| 11276767 | Additive core subtractive liner for metal cut etch processes | Ruqiang Bao, Kisup Chung, Sivananda K. Kanakasabapathy, David L. Rath, Indira Seshadri +1 more | 2022-03-15 |
| 11227923 | Wrap around contact process margin improvement with early contact cut | Ruilong Xie, Veeraraghavan S. Basker, Alexander Reznicek, Yao Yao | 2022-01-18 |
| 11152489 | Additive core subtractive liner for metal cut etch processes | Ruqiang Bao, Kisup Chung, Sivananda K. Kanakasabapathy, David L. Rath, Indira Seshadri +1 more | 2021-10-19 |
| 11139372 | Dual step etch-back inner spacer formation | Yao Yao, Ruilong Xie, Veeraraghavan S. Basker | 2021-10-05 |
| 11133189 | Metal cut patterning and etching to minimize interlayer dielectric layer loss | Kisup Chung, Ekmini Anuja De Silva, Siva Kanakasabapathy, Indira Seshadri | 2021-09-28 |
| 11081568 | Protective bilayer inner spacer for nanosheet devices | Yao Yao, Ruilong Xie, Veeraraghavan S. Basker | 2021-08-03 |
| 11075281 | Additive core subtractive liner for metal cut etch processes | Ruqiang Bao, Kisup Chung, Sivananda K. Kanakasabapathy, David L. Rath, Indira Seshadri +1 more | 2021-07-27 |
| 11056399 | Source and drain EPI protective spacer during single diffusion break formation | Yao Yao, Veeraraghavan S. Basker, Kangguo Cheng, Zhenxing Bi, Ruilong Xie | 2021-07-06 |
| 11024715 | FinFET gate cut after dummy gate removal | John R. Sporre, Siva Kanakasabapathy, Jeffrey C. Shearer, Nicole Saulnier | 2021-06-01 |
| 11024536 | Contact interlayer dielectric replacement with improved SAC cap retention | Adra Carr, Vimal Kamineni, Ruilong Xie, Nigel G. Cave, Veeraraghavan S. Basker | 2021-06-01 |
| 11011417 | Method and structure of metal cut | Su Chen Fan, Ruilong Xie, Veeraraghavan S. Basker | 2021-05-18 |
| 11004944 | Gate cut device fabrication with extended height gates | Kangguo Cheng, John R. Sporre, Peng Xu | 2021-05-11 |