Issued Patents All Time
Showing 51–75 of 225 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10825916 | Vertical transport field-effect transistor including dual layer top spacer | Choonghyun Lee, Alexander Reznicek, Christopher J. Waskiewicz | 2020-11-03 |
| 10825740 | Low resistance source-drain contacts using high temperature silicides | Praneet Adusumilli, Christian Lavoie, Ahmet S. Ozcan | 2020-11-03 |
| 10790199 | Dual channel silicon/silicon germanium complementary metal oxide semiconductor performance with interface engineering | Ruqiang Bao, Choonghyun Lee, Richard Southwick | 2020-09-29 |
| 10777659 | Self-aligned bottom source/drain epitaxial growth in vertical field effect transistors | Choonghyun Lee, Ruqiang Bao, Shogo Mochizuki, Brent A. Anderson | 2020-09-15 |
| 10749012 | Formation of self-aligned bottom spacer for vertical transistors | Ruqiang Bao, Choonghyun Lee, Shogo Mochizuki | 2020-08-18 |
| 10741663 | Encapsulation layer for vertical transport field-effect transistor gate stack | Ruqiang Bao, Michael P. Belyansky | 2020-08-11 |
| 10741652 | Wrap-around-contact structure for top source/drain in vertical FETs | Choonghyun Lee, Christopher J. Waskiewicz, Alexander Reznicek | 2020-08-11 |
| 10734475 | Stacked MIM capacitors with self-aligned contact to reduce via enclosure | Takashi Ando, Robert A. Groves, Lawrence A. Clevenger, Griselda Bonilla | 2020-08-04 |
| 10714399 | Gate-last process for vertical transport field-effect transistor | Shogo Mochizuki, Choonghyun Lee | 2020-07-14 |
| 10685888 | Low resistance source-drain contacts using high temperature silicides | Praneet Adusumilli, Christian Lavoie, Ahmet S. Ozcan | 2020-06-16 |
| 10685876 | Liner and cap structures for reducing local interconnect vertical resistance without compromising reliability | Su Chen Fan, Raghuveer R. Patlolla, Cornelius Brown Peethala | 2020-06-16 |
| 10680083 | Oxide isolated fin-type field-effect transistors | Ruqiang Bao, Paul C. Jamison, Choonghyun Lee | 2020-06-09 |
| 10672905 | Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts | Ruqiang Bao, Brent A. Anderson, Choonghyun Lee | 2020-06-02 |
| 10672670 | Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages | Ruqiang Bao, Brent A. Anderson, Choonghyun Lee | 2020-06-02 |
| 10658299 | Replacement metal gate processes for vertical transport field-effect transistor | Choonghyun Lee, Chun Wing Yeung, Ruqiang Bao | 2020-05-19 |
| 10651266 | Efficient metal-insulator-metal capacitor | Kisup Chung, Isabel C. Estrada-Raygoza, Chi-Chun Liu, Yann Mignot, Hao Tang | 2020-05-12 |
| 10636792 | Structure and method for multiple threshold voltage definition in advanced CMOS device technology | Vijay Narayanan | 2020-04-28 |
| 10615083 | Formation of common interfacial layer on Si/SiGe dual channel complementary metal oxide semiconductor device | Ruqiang Bao, Choonghyun Lee, Shogo Mochizuki | 2020-04-07 |
| 10615082 | VFET metal gate patterning for vertical transport field effect transistor | Brent A. Anderson, Ruqiang Bao, Kangguo Cheng, Choonghyun Lee, Junli Wang | 2020-04-07 |
| 10615043 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Vijay Narayanan | 2020-04-07 |
| 10607990 | Fabrication of field effect transistors with different threshold voltages through modified channel interfaces | Takashi Ando, Ruqiang Bao, Choonghyun Lee | 2020-03-31 |
| 10593797 | Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy | Shogo Mochizuki, Brent A. Anderson, Junli Wang | 2020-03-17 |
| 10580881 | Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices | Ruqiang Bao, Paul C. Jamison, Choonghyun Lee | 2020-03-03 |
| 10573746 | VTFET devices utilizing low temperature selective epitaxy | Shogo Mochizuki | 2020-02-25 |
| 10573565 | Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments | Lisa F. Edge, Paul C. Jamison, Vamsi K. Paruchuri | 2020-02-25 |