Issued Patents All Time
Showing 51–75 of 122 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9847388 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Xin Miao, Chun-Chen Yeh | 2017-12-19 |
| 9773901 | Bottom spacer formation for vertical transistor | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2017-09-26 |
| 9748382 | Self aligned top extension formation for vertical transistors | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2017-08-29 |
| 9748359 | Vertical transistor bottom spacer formation | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2017-08-29 |
| 9741813 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Tenko Yamashita | 2017-08-22 |
| 9735054 | Gate tie-down enablement with inner spacer | Su Chen Fan, Andre P. Labonte, Lars Liebmann | 2017-08-15 |
| 9735248 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Tenko Yamashita | 2017-08-15 |
| 9653573 | Replacement metal gate including dielectric gate material | Linus Jang, Sivananda K. Kanakasabapathy, Soon-Cheon Seo, Raghavasimhan Sreenivasan | 2017-05-16 |
| 9640514 | Wafer bonding using boron and nitrogen based bonding stack | Wei Lin, Troy L. Graves-Abe, Donald F. Canaperi, Spyridon Skordas, Matthew T. Shoudy +2 more | 2017-05-02 |
| 9634110 | POC process flow for conformal recess fill | Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie | 2017-04-25 |
| 9627257 | Gate tie-down enablement with inner spacer | Su Chen Fan, Andre P. Labonte, Lars Liebmann | 2017-04-18 |
| 9607825 | Hydrogen-free silicon-based deposited dielectric films for nano device fabrication | Donald F. Canaperi, Alfred Grill, Son V. Nguyen, Deepika Priyadarshini, Hosadurga Shobha +1 more | 2017-03-28 |
| 9583489 | Solid state diffusion doping for bulk finFET devices | Brent A. Anderson, Hemanth Jagannathan, Balasubramanian Pranatharthiharan | 2017-02-28 |
| 9576954 | POC process flow for conformal recess fill | Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie | 2017-02-21 |
| 9564370 | Effective device formation for advanced technology nodes with aggressive fin-pitch scaling | Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. Surisetty | 2017-02-07 |
| 9558935 | Hydrogen-free silicon-based deposited dielectric films for nano device fabrication | Donald F. Canaperi, Alfred Grill, Son V. Nguyen, Deepika Priyadarshini, Hosadurga Shobha +1 more | 2017-01-31 |
| 9558934 | Hydrogen-free silicon-based deposited dielectric films for nano device fabrication | Donald F. Canaperi, Alfred Grill, Son V. Nguyen, Deepika Priyadarshini, Hosadurga Shobha +1 more | 2017-01-31 |
| 9536981 | Field effect transistor device spacers | Xiuyu Cai, Tenko Yamashita | 2017-01-03 |
| 9536733 | Hydrogen-free silicon-based deposited dielectric films for nano device fabrication | Donald F. Canaperi, Alfred Grill, Son V. Nguyen, Deepika Priyadarshini, Hosadurga Shobha +1 more | 2017-01-03 |
| 9530651 | Replacement metal gate finFET | Hemanth Jagannathan, Junli Wang, Chun-Chen Yeh, Stefan Schmitz | 2016-12-27 |
| 9484431 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Tenko Yamashita | 2016-11-01 |
| 9484256 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Tenko Yamashita | 2016-11-01 |
| 9472407 | Replacement metal gate FinFET | Hemanth Jagannathan, Junli Wang, Chun-Chen Yeh, Stefan Schmitz | 2016-10-18 |
| 9449812 | Hydrogen-free silicon-based deposited dielectric films for nano device fabrication | Donald F. Canaperi, Alfred Grill, Son V. Nguyen, Deepika Priyadarshini, Hosadurga Shobha +1 more | 2016-09-20 |
| 9443855 | Spacer formation on semiconductor device | Thamarai S. Devarajan, Eric R. Miller, Soon-Cheon Seo | 2016-09-13 |