Issued Patents All Time
Showing 26–50 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10535713 | Integrated reactive material erasure element with phase change memory | Cyril Cabral, Jr., Kenneth P. Rodbell | 2020-01-14 |
| 10374103 | Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays | Fabio Carta, Chung H. Lam, Bahman Hekmatshoartabari | 2019-08-06 |
| 10312085 | Tone inversion integration for phase change memory | Robert L. Bruce, John M. Papalia, HsinYu Tsai | 2019-06-04 |
| 10256271 | Phase change memory array with integrated polycrystalline diodes | Bahman Hekmatshoartabari, Chung H. Lam, Fabio Carta | 2019-04-09 |
| 10211054 | Tone inversion integration for phase change memory | Robert L. Bruce, John M. Papalia, HsinYu Tsai | 2019-02-19 |
| 10141503 | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication | Robert L. Bruce, Takeshi Masuda | 2018-11-27 |
| 10056546 | Metal nitride keyhole or spacer phase change memory cell structures | Sangbum Kim, Chung H. Lam, Norma E. Sosa | 2018-08-21 |
| 9972660 | 3D phase change memory with high endurance | Hsiang-Lan Lung, Wanki Kim, Chung H. Lam | 2018-05-15 |
| 9941004 | Integrated arming switch and arming switch activation layer for secure memory | Cyril Cabral, Jr., Kenneth P. Rodbell | 2018-04-10 |
| 9882126 | Phase change storage device with multiple serially connected storage regions | Huai-Yu Cheng, Wei-Chih Chien, Sangbum Kim, Chiao-Wen Yeh | 2018-01-30 |
| 9793323 | Phase change memory with high endurance | Hsiang-Lan Lung, Wanki Kim, Chung H. Lam | 2017-10-17 |
| 9627612 | Metal nitride keyhole or spacer phase change memory cell structures | Sangbum Kim, Chung H. Lam, Norma E. Sosa Cortes | 2017-04-18 |
| 9276208 | Phase change memory cell with heat shield | Chung H. Lam, Alejandro G. Schrott | 2016-03-01 |
| 9263336 | Symmetrical bipolar junction transistor array | Jin Cai, Sangbum Kim, Chung H. Lam, Tak H. Ning | 2016-02-16 |
| 9240324 | Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor | Chung H. Lam, Gen P. Lauer | 2016-01-19 |
| 9166161 | Phase change memory cell with large electrode contact area | Chung H. Lam, Jing Li, Alejandro G. Schrott, Norma E. Sosa Cortes | 2015-10-20 |
| 9059404 | Resistive memory with a stabilizer | Sangbum Kim, Chung H. Lam, Asit Ray, Norma E. Sosa Cortes | 2015-06-16 |
| 9012970 | Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor | Chung H. Lam, Gen P. Lauer | 2015-04-21 |
| 9006700 | Resistive memory with a stabilizer | Sangbum Kim, Chung H. Lam, Asit Ray, Norma E. Sosa Cortes | 2015-04-14 |
| 8981326 | Phase change memory cell with heat shield | Chung H. Lam, Alejandro G. Schrott | 2015-03-17 |
| 8971527 | Reliable physical unclonable function for device authentication | Chung H. Lam, Dirk Pfeiffer | 2015-03-03 |
| 8946073 | Phase change memory cell with large electrode contact area | Chung H. Lam, Jing Li, Alejandro G. Schrott, Norma E. Sosa Cortes | 2015-02-03 |
| 8921820 | Phase change memory cell with large electrode contact area | Chung H. Lam, Jing Li, Alejandro G. Schrott, Norma E. Sosa Cortes | 2014-12-30 |
| 8861736 | Reliable physical unclonable function for device authentication | Chung H. Lam, Dirk Pfeiffer | 2014-10-14 |
| 8853662 | Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor | Chung H. Lam, Gen P. Lauer | 2014-10-07 |