AR

Alexander Reznicek

IBM: 1182 patents #3 of 70,183Top 1%
Globalfoundries: 77 patents #21 of 4,424Top 1%
ET Elpis Technologies: 9 patents #2 of 121Top 2%
GU Globalfoundries U.S.: 4 patents #206 of 665Top 35%
Samsung: 3 patents #30,683 of 75,807Top 45%
TE Tessera: 3 patents #129 of 271Top 50%
SS Stmicroelectronics Sa: 2 patents #601 of 1,676Top 40%
MT Matheson Tri-Gas: 1 patents #28 of 47Top 60%
IB International Business: 1 patents #4 of 119Top 4%
IM International Machines: 1 patents #1 of 34Top 3%
AS Adeia Semiconductor Solutions: 1 patents #22 of 57Top 40%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
📍 Troy, NY: #1 of 610 inventorsTop 1%
🗺 New York: #2 of 115,490 inventorsTop 1%
Overall (All Time): #40 of 4,157,543Top 1%
1279
Patents All Time

Issued Patents All Time

Showing 51–75 of 1,279 patents

Patent #TitleCo-InventorsDate
11942388 Temperature-assisted device with integrated thin-film heater Bahman Hekmatshoartabari, Takashi Ando, Nanbo Gong 2024-03-26
11929404 Transistor gates having embedded metal-insulator-metal capacitors Takashi Ando, Bahman Hekmatshoartabari, Nanbo Gong 2024-03-12
11915734 Spin-orbit-torque magnetoresistive random-access memory with integrated diode Pouya Hashemi, Takashi Ando 2024-02-27
11910734 Phase change memory cell with ovonic threshold switch Nanbo Gong, Takashi Ando, Robert L. Bruce, Bahman Hekmatshoartabari 2024-02-20
11901449 Series connected stacked vertical transistors for high voltage applications Bahman Hekmatshoartabari, Tak H. Ning 2024-02-13
11894444 Secure chip identification using random threshold voltage variation in a field effect transistor structure as a physically unclonable function Clint Jason Oteri, Bahman Hekmatshoartabari, Jingyun Zhang, Ruilong Xie 2024-02-06
11894433 Method and structure to improve stacked FET bottom EPI contact Ruilong Xie, Chen Zhang, Kangguo Cheng 2024-02-06
11887890 Partial self-aligned contact for MOL Ruilong Xie, Veeraraghavan S. Basker, Junli Wang 2024-01-30
11881505 Tri-layer STI liner for nanosheet leakage control Choonghyun Lee, Xin Miao, Jingyun Zhang 2024-01-23
11869893 Stacked field effect transistor with wrap-around contacts Ruilong Xie, Chun-Chen Yeh, Dechao Guo 2024-01-09
11869812 Stacked complementary field effect transistors Ruilong Xie, Huimei Zhou, Miaomiao Wang 2024-01-09
11869983 Low voltage/power junction FET with all-around junction gate Bahman Hekmatshoartabari, Karthik Balakrishnan 2024-01-09
11862710 Vertical transistor including symmetrical source/drain extension junctions Chun-Chen Yeh, Veeraraghavan S. Basker, Junli Wang 2024-01-02
11855148 Vertical field effect transistor with dual threshold voltage Takashi Ando, Ruilong Xie, Pouya Hashemi 2023-12-26
11855180 Gate induced drain leakage reduction in FinFETs Takashi Ando, Jingyun Zhang, Ruilong Xie 2023-12-26
11848264 Semiconductor structure with stacked vias having dome-shaped tips Koichi Motoyama, Kenneth Chun Kuen Cheng, Chanro Park 2023-12-19
11830877 Co-integrated channel and gate formation scheme for nanosheet transistors having separately tuned threshold voltages Takashi Ando, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi 2023-11-28
11817497 Vertical field effect transistor inverter with single fin device Junli Wang, Ruilong Xie, Chen Zhang 2023-11-14
11818886 Low program voltage flash memory cells with embedded heater in the control gate Takashi Ando, Nanbo Gong, Bahman Hekmatshoartabari 2023-11-14
11798867 Half buried nFET/pFET epitaxy source/drain strap Jingyun Zhang, Ruilong Xie, Bruce B. Doris 2023-10-24
11800698 Semiconductor structure with embedded capacitor Ruilong Xie, Takashi Ando, Bahman Hekmatshoartabari 2023-10-24
11791290 Physical unclonable function for secure integrated hardware systems Oscar van der Straten, Koichi Motoyama, Ruilong Xie 2023-10-17
11756996 Formation of wrap-around-contact for gate-all-around nanosheet FET Takashi Ando, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang 2023-09-12
11757036 Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devices Ruilong Xie, Chen Zhang, Julien Frougier, Shogo Mochizuki 2023-09-12
11742425 FinFET device with partial interface dipole formation for reduction of gate induced drain leakage Takashi Ando, Pouya Hashemi, Ruilong Xie 2023-08-29