Issued Patents All Time
Showing 76–100 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11742246 | Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistors | Ruilong Xie, Hemanth Jagannathan, Christopher J. Waskiewicz | 2023-08-29 |
| 11742354 | Top epitaxial layer and contact for VTFET | Ruilong Xie, Christopher J. Waskiewicz, Su Chen Fan, Heng Wu | 2023-08-29 |
| 11737379 | Antenna assisted ReRAM formation | Youngseok Kim, Soon-Cheon Seo, Injo Ok | 2023-08-22 |
| 11737289 | High density ReRAM integration with interconnect | Takashi Ando, Pouya Hashemi, Ruilong Xie | 2023-08-22 |
| 11735480 | Transistor having source or drain formation assistance regions with improved bottom isolation | Ruilong Xie, Effendi Leobandung, Jingyun Zhang | 2023-08-22 |
| 11735628 | Nanosheet metal-oxide semiconductor field effect transistor with asymmetric threshold voltage | Takashi Ando, Ruilong Xie, Jingyun Zhang | 2023-08-22 |
| 11715794 | VTFET with cell height constraints | Heng Wu, Ruilong Xie, Lan Yu, Junli Wang | 2023-08-01 |
| 11711989 | Phase change memory | Injo Ok, Soon-Cheon Seo, Youngseok Kim, Timothy Mathew Philip | 2023-07-25 |
| 11711982 | Laser anneal for MRAM encapsulation enhancement | Michael Rizzolo, Oscar van der Straten, Oleg Gluschenkov | 2023-07-25 |
| 11697889 | Three-dimensionally stretchable single crystalline semiconductor membrane | Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari, Keith E. Fogel | 2023-07-11 |
| 11695004 | Vertical bipolar junction transistor and vertical field effect transistor with shared floating region | Ruilong Xie, Jeng-Bang Yau, Bahman Hekmatshoartabari | 2023-07-04 |
| 11688646 | Reduced source/drain coupling for CFET | Ruilong Xie, Chanro Park, Chun-Chen Yeh | 2023-06-27 |
| 11683941 | Resistive random access memory integrated with vertical transport field effect transistors | Karthik Balakrishnan, Bahman Hekmatshoartabari, Takashi Ando | 2023-06-20 |
| 11682718 | Vertical bipolar junction transistor with all-around extrinsic base and epitaxially graded intrinsic base | Bahman Hekmatshoartabari, Tak H. Ning, Liying Jiang | 2023-06-20 |
| 11676894 | Resistance tunable fuse structure formed by embedded thin metal layers | Chih-Chao Yang, Miaomiao Wang, Donald F. Canaperi | 2023-06-13 |
| 11665983 | Phase change memory cell with ovonic threshold switch | Nanbo Gong, Takashi Ando, Robert L. Bruce, Bahman Hekmatshoartabari | 2023-05-30 |
| 11664455 | Wrap-around bottom contact for bottom source/drain | Junli Wang, Ruilong Xie, Bruce B. Doris | 2023-05-30 |
| 11664375 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Balasubramanian Pranatharthiharan, Charan V. Surisetty | 2023-05-30 |
| 11664271 | Dual damascene with short liner | Koichi Motoyama, Oscar van der Straten, Joseph F. Maniscalco, Raghuveer R. Patlolla, Theodorus E. Standaert | 2023-05-30 |
| 11659780 | Phase change memory structure with efficient heating system | Injo Ok, Choonghyun Lee, Soon-Cheon Seo | 2023-05-23 |
| 11646372 | Vertical transistor floating body one transistor DRAM memory cell | Karthik Balakrishnan, Bahman Hekmatshoartabari, Clint Jason Oteri | 2023-05-09 |
| 11646362 | Vertical transport field-effect transistor structure having increased effective width and self-aligned anchor for source/drain region formation | Ruilong Xie, Takashi Ando, Pouya Hashemi | 2023-05-09 |
| 11631462 | Temperature assisted programming of flash memory for neuromorphic computing | Nanbo Gong, Takashi Ando, Bahman Hekmatshoartabari | 2023-04-18 |
| 11621332 | Wraparound contact to a buried power rail | Ruilong Xie, Veeraraghavan S. Basker, Junli Wang | 2023-04-04 |
| 11621297 | Stackable symmetrical operation memory bit cell structure with bidirectional selectors | Bahman Hekmatshoartabari, Oleg Gluschenkov, Yasir Sulehria | 2023-04-04 |