Issued Patents All Time
Showing 101–125 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11605673 | Dual resistive random-access memory with two transistors | Tsung-Sheng Kang, Takashi Ando, Bahman Hekmatshoartabari | 2023-03-14 |
| 11594617 | Vertical reconfigurable field effect transistor | Bahman Hekmatshoartabari | 2023-02-28 |
| 11587837 | Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor | Choonghyun Lee, Takashi Ando, Jingyun Zhang | 2023-02-21 |
| 11588103 | Resistive memory array | Youngseok Kim, Choonghyun Lee, Timothy Mathew Philip, Soon-Cheon Seo, Injo Ok | 2023-02-21 |
| 11575028 | Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devices | Karthik Balakrishnan, Jeng-Bang Yau, Tak H. Ning | 2023-02-07 |
| 11575025 | Vertical field effect transistor with self-aligned source and drain top junction | Ruilong Xie, Chun-Chen Yeh, Chen Zhang | 2023-02-07 |
| 11575023 | Secure chip identification using random threshold voltage variation in a field effect transistor structure as a physically unclonable function | Clint Jason Oteri, Bahman Hekmatshoartabari, Jingyun Zhang, Ruilong Xie | 2023-02-07 |
| 11569438 | Magnetoresistive random-access memory device | Matthias Georg Gottwald, Pouya Hashemi, Bruce B. Doris | 2023-01-31 |
| 11563082 | Reduction of drain leakage in nanosheet device | Pouya Hashemi, Takashi Ando, Ruilong Xie | 2023-01-24 |
| 11557663 | Twin gate tunnel field-effect transistor (FET) | Karthik Balakrishnan, Bahman Hekmatshoartabari, Jeng-Bang Yau | 2023-01-17 |
| 11557675 | Reduction of bottom epitaxy parasitics for vertical transport field effect transistors | Tao Li, Tsung-Sheng Kang, Ruilong Xie | 2023-01-17 |
| 11557651 | Nanosheet transistors with inner airgaps | Heng Wu, Ruilong Xie, Lan Yu | 2023-01-17 |
| 11552243 | MRAM structure with ternary weight storage | Bahman Hekmatshoartabari, Michael Rizzolo, Ravi Nair | 2023-01-10 |
| 11551750 | Enhanced state dual memory cell | Bahman Hekmatshoartabari | 2023-01-10 |
| 11527574 | Stacked resistive memory with individual switch control | Takashi Ando, Jingyun Zhang, Pouya Hashemi, Choonghyun Lee | 2022-12-13 |
| 11527616 | Vertical transport CMOS transistors with asymmetric threshold voltage | Takashi Ando, Choonghyun Lee, Jingyun Zhang | 2022-12-13 |
| 11521927 | Buried power rail for scaled vertical transport field effect transistor | Ruilong Xie, Junli Wang, Choonghyun Lee | 2022-12-06 |
| 11515430 | Tilted nanowire transistor | Pouya Hashemi, Kangguo Cheng, Karthik Balakrishnan | 2022-11-29 |
| 11502169 | Nanosheet semiconductor devices with n/p boundary structure | Ruilong Xie, Jingyun Zhang, Xin Miao | 2022-11-15 |
| 11500614 | Stacked FET multiply and accumulate integrated circuit | Bahman Hekmatshoartabari, Ruilong Xie, Jingyun Zhang | 2022-11-15 |
| 11495668 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang | 2022-11-08 |
| 11495669 | Full air-gap spacers for gate-all-around nanosheet field effect transistors | Takashi Ando, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang | 2022-11-08 |
| 11489045 | Nanosheet transistor with body contact | Ruilong Xie, Bahman Hekmatshoartabari, Tak H. Ning | 2022-11-01 |
| 11476264 | Stacked vertical transistor erasable programmable read-only memory and programmable inverter devices | Karthik Balakrishnan, Tak H. Ning, Bahman Hekmatshoartabari | 2022-10-18 |
| 11456308 | Low-voltage flash memory integrated with a vertical field effect transistor | Bahman Hekmatshoartabari, Takashi Ando, Nanbo Gong | 2022-09-27 |