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Home › Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance

Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance

US Patent 12068415 · Granted Aug 20, 2024

Estimated economic value: $51,741,000 ⓘ

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