Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods

DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods

US Patent 9299766 · Granted Mar 29, 2016

Estimated economic value: $2,226,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Oxidation barriers with CVD soak processes2025
Electrical contact cavity structure and methods of forming the same2025
Void-free contact trench fill in gate-all-around FET architecture2025
System and methods for dram contact formation2025
Stacked FETS with non-shared work function metals2025
Equipment and method for manufacturing separator for fuel cell2025
Tape measure having light emitting device2024
Formation of metal vias on metal lines2024
Precise bottom junction formation for vertical transport field effect transistor2024
Buried power rails located in a base layer including first, second, and third et2024
Silicide films through selective deposition2024
Smart drilling machine, smart drilling system, and method of controlling smart d2024