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Home › Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance

Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance

US Patent 11515427 · Granted Nov 29, 2022

Estimated economic value: $7,547,000 ⓘ

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