RK

Rishikesh Krishnan

IBM: 28 patents #3,676 of 70,183Top 6%
Micron: 11 patents #1,364 of 6,345Top 25%
Globalfoundries: 6 patents #578 of 4,424Top 15%
GU Globalfoundries U.S.: 1 patents #22 of 211Top 15%
📍 Cohoes, NY: #9 of 185 inventorsTop 5%
🗺 New York: #2,124 of 115,490 inventorsTop 2%
Overall (All Time): #61,963 of 4,157,543Top 2%
46
Patents All Time

Issued Patents All Time

Showing 26–46 of 46 patents

Patent #TitleCo-InventorsDate
9269607 Wafer stress control with backside patterning Edward R. Engbrecht, Donghun Kang, Oh-Jung Kwon, Karen A. Nummy 2016-02-23
9123826 Single crystal source-drain merged by polycrystalline material Eric C. Harley, Judson R. Holt, Yue Ke, Timothy J. McArdle, Alexander Reznicek +1 more 2015-09-01
9099394 Non-volatile memory structure employing high-k gate dielectric and metal gate Nicolas L. Breil, Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon 2015-08-04
9087927 Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches Michael P. Chudzik, Bachir Dirahoui, Siddarth A. Krishnan, Oh-Jung Kwon, Paul C. Parries +1 more 2015-07-21
8993044 Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials John Smythe, Vishwanath Bhat, Noel Rocklein, Bhaskar Srinivasan, Jeff Hull +1 more 2015-03-31
8987863 Electrical components for microelectronic devices and methods of forming the same F. Daniel Gealy, Vidya Srividya, Noel Rocklein 2015-03-24
8901706 Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches Michael P. Chudzik, Bachir Dirahoui, Siddarth A. Krishnan, Oh-Jung Kwon, Paul C. Parries +1 more 2014-12-02
8861179 Capacitors having dielectric regions that include multiple metal oxide-comprising materials John Smythe, Vishwanath Bhat, Noel Rocklein, Bhaskar Srinivasan, Jeff Hull +1 more 2014-10-14
8809176 Replacement gate with reduced gate leakage current Takashi Ando, Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon, Keith Kwong Hon Wong 2014-08-19
8679938 Shallow trench isolation for device including deep trench capacitors Sunfei Fang, Oleg Gluschenkov, Byeong Y. Kim, Daewon Yang 2014-03-25
8673390 Methods of making crystalline tantalum pentoxide Vishwanath Bhat, Daniel Gealy 2014-03-18
8592325 Insulating layers on different semiconductor materials Joseph F. Shepard, Jr., Siddarth A. Krishnan, Michael P. Chudzik 2013-11-26
8581351 Replacement gate with reduced gate leakage current Takashi Ando, Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon, Keith Kwong Hon Wong 2013-11-12
8450173 Electrical components for microelectronic devices and methods of forming the same Daniel Gealy, Vidya Srividya, Noel Rocklein 2013-05-28
8310807 Capacitors having dielectric regions that include multiple metal oxide-comprising materials John Smythe, Vishwanath Bhat, Noel Rocklein, Bhaskar Srinivasan, Jeff Hull +1 more 2012-11-13
8282988 Methods of making crystalline tantalum pentoxide Vishwanath Bhat, Daniel Gealy 2012-10-09
8241981 Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor Joseph F. Shepard, Jr., Michael P. Chudzik, Christian Lavoie, Dong-Ick Lee, Oh-Jung Kwon +2 more 2012-08-14
8236372 Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials John Smythe, Vishwanath Bhat, Noel Rocklein, Bhaskar Srinivasan, Jeff Hall +1 more 2012-08-07
8012532 Methods of making crystalline tantalum pentoxide Vishwanath Bhat, Dan Gealy 2011-09-06
7968969 Electrical components for microelectronic devices Dan Gealy, Vidya Srividya, Noel Rocklein 2011-06-28
7560392 Electrical components for microelectronic devices and methods of forming the same Dan Gealy, Vidya Srividya, Noel Rocklein 2009-07-14