Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
DY

Daewon Yang — 20 Patents

IBM: 20 patents #5,465 of 70,183Top 8%
NSNovellus Systems: 2 patents #345 of 780Top 45%
Samsung: 1 patents #50,112 of 75,807Top 70%
Hopewell Junction, NY: #90 of 648 inventorsTop 15%
New York: #7,014 of 115,490 inventorsTop 7%
Overall (All Time): #214,803 of 4,157,543Top 6%
20 Patents All Time
Daewon Yang has been granted 20 US patents while listed as an inventor at IBM. The first was granted in 2005 and the most recent in April 2016. Daewon Yang ranks #214,803 of 4,157,543 US inventors in our database (top 5.2%). Patent records list Daewon Yang in Hopewell Junction, NY, US.

Patents per Year

Patents granted per year, 2005 to 2016Bar chart with a peak of 6 patents in 2009.peak 62005: 2 patents20052007: 1 patents20072008: 1 patents20082009: 6 patents20092010: 3 patents20102011: 2 patents20112013: 1 patents20132014: 1 patents20142015: 2 patents20152016: 1 patents2016

Issued Patents All Time

Showing 1–20 of 20 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
9318344 CMOS structures and methods for improving yield Huilong Zhu 2016-04-19 $3,648,000
9080239 Method and apparatus for angular high density plasma chemical vapor deposition Kangguo Cheng, Pavel Smetana, Richard S. Wise, Keith Kwong Hon Wong 2015-07-14 $7,900,000
9016236 Method and apparatus for angular high density plasma chemical vapor deposition Kangguo Cheng, Pavel Smetana, Richard S. Wise, Keith Kwong Hon Wong 2015-04-28 $3,749,000
8679938 Shallow trench isolation for device including deep trench capacitors Sunfei Fang, Oleg Gluschenkov, Byeong Y. Kim, Rishikesh Krishnan 2014-03-25 $4,381,000
8557649 Method for controlling structure height Rajasekhar Venigalla, Michael V. Aquilino, Massud Aminpur, Michael P. Belyansky, Unoh Kwon +1 more 2013-10-15 $3,582,000
8030707 Semiconductor structure Kangguo Cheng, Naftali E. Lustig 2011-10-04 $5,606,000
7943467 Structure and method to fabricate MOSFET with short gate Huilong Zhu, Brian J. Greene, Yanfeng Wang 2011-05-17 $5,524,000
7851376 Compressive nitride film and method of manufacturing thereof Woo-Hyeong Lee, Tai-chi Su, Yun-Yu Wang 2010-12-14 $5,212,000
7804136 Method of forming nitride films with high compressive stress for improved PFET device performance Richard A. Conti, Ronald P. Bourque, Nancy R. Klymko, Anita Madan, Michael C. Smits +2 more 2010-09-28 $9,053,000
7750414 Structure and method for reducing threshold voltage variation Huilong Zhu, Yanfeng Wang, Huajie Chen 2010-07-06 $3,063,000
7615432 HDP/PECVD methods of fabricating stress nitride structures for field effect transistors Junjung Kim, Jae-Eun Park, Ja-Hum Ku 2009-11-10 $10,417,000
7563704 Method of forming an interconnect including a dielectric cap having a tensile stress Chih-Chao Yang, Kaushik Chanda, Lawrence A. Clevenger, Yun-Yu Wang 2009-07-21 $14,996,000
7521307 CMOS structures and methods using self-aligned dual stressed layers Huilong Zhu 2009-04-21 $5,028,000
7521308 Dual layer stress liner for MOSFETS Deleep R. Nair, Christopher V. Baiocco, Xiangdong Chen, Junjung Kim, Jae-Eun Park 2009-04-21 $5,028,000
7514370 Compressive nitride film and method of manufacturing thereof Woo-Hyeong Lee, Tai-chi Su, Yun-Yu Wang 2009-04-07 $6,511,000
7491660 Method of forming nitride films with high compressive stress for improved PFET device performance Richard A. Conti, Ronald P. Bourque, Nancy R. Klymko, Anita Madan, Michael C. Smits +2 more 2009-02-17
7462527 Method of forming nitride films with high compressive stress for improved PFET device performance Richard A. Conti, Ronald P. Bourque, Nancy R. Klymko, Anita Madan, Michael C. Smits +2 more 2008-12-09
7179760 Bilayer cap structure including HDP/bHDP films for conductive metallization and method of making same Richard A. Conti, Thomas Houghton, Michael F. Lofaro, Jeffery B. Maxson, Ann McDonald +2 more 2007-02-20 $6,976,000
6914015 HDP process for high aspect ratio gap filling Michael P. Belyansky, Patricia Argandona, Gregory DiBello, Andreas Knorr 2005-07-05 $5,545,000
6911378 Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structure Richard A. Conti, Kenneth M. Davis, John A. Fitzsimmons, David L. Rath 2005-06-28 $7,000,000