Issued Patents All Time
Showing 51–75 of 283 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11069682 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Prasanna Khare | 2021-07-20 |
| 11049933 | Creation of stress in the channel of a nanosheet transistor | Tenko Yamashita, Guillaume Audoit, Nicolas Bernier, Remi Coquand, Shay Reboh | 2021-06-29 |
| 11038042 | Forming gate last vertical FET with self-aligned spacers and junctions | — | 2021-06-15 |
| 11004750 | Middle of the line contact formation | Ruilong Xie, Chanro Park, Balasubramanian Pranatharthiharan | 2021-05-11 |
| 10998441 | Strained silicon complementary metal oxide semiconductor including a silicon containing tensile n-type fin field effect transistor and silicon containing compressive p-type fin field effect transistor formed using a dual relaxed substrate | Kangguo Cheng, Xin Miao, Alexander Reznicek | 2021-05-04 |
| 10998234 | Nanosheet bottom isolation and source or drain epitaxial growth | Ruilong Xie, Veeraraghavan S. Basker, Balasubramanian Pranatharthiharan | 2021-05-04 |
| 10991808 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2021-04-27 |
| 10971490 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Peng Xu | 2021-04-06 |
| 10964750 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2021-03-30 |
| 10957799 | Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions | Ruilong Xie, Julien Frougier, Chanro Park, Edward J. Nowak, Yi Qi +1 more | 2021-03-23 |
| 10930756 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang | 2021-02-23 |
| 10916627 | Nanosheet transistor with fully isolated source and drain regions and spacer pinch off | Pietro Montanini | 2021-02-09 |
| 10910273 | Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer | Richard A. Conti, Choonghyun Lee | 2021-02-02 |
| 10903369 | Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions | Ruilong Xie, Julien Frougier, Chanro Park, Edward J. Nowak, Yi Qi +1 more | 2021-01-26 |
| 10903331 | Positioning air-gap spacers in a transistor for improved control of parasitic capacitance | Kangguo Cheng, Wenyu Xu, Julien Frougier | 2021-01-26 |
| 10903315 | Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection | Robin Hsin Kuo Chao, Julien Frougier, Ruilong Xie | 2021-01-26 |
| 10896816 | Silicon residue removal in nanosheet transistors | Zhenxing Bi, Thamarai S. Devarajan, Binglin Miao, Muthumanickam Sankarapandian, Charan V. Surisetty +2 more | 2021-01-19 |
| 10872962 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2020-12-22 |
| 10854606 | Method to induce strain in finFET channels from an adjacent region | Pierre Morin | 2020-12-01 |
| 10854750 | Semiconductor device with fin and related methods | Pierre Morin | 2020-12-01 |
| 10847654 | Method to induce strain in 3-D microfabricated structures | Pierre Morin | 2020-11-24 |
| 10832964 | Replacement contact formation for gate contact over active region with selective metal growth | Ruilong Xie, Balasubramanian Pranatharthiharan, Chanro Park | 2020-11-10 |
| 10818751 | Nanosheet transistor barrier for electrically isolating the substrate from the source or drain regions | Mona A. Ebrish, Fee Li Lie, Gauri Karve, Indira Seshadri, Lawrence A. Clevenger +1 more | 2020-10-27 |
| 10818775 | Method for fabricating a field-effect transistor | Shay Reboh, Emmanuel Augendre, Remi Coquand | 2020-10-27 |
| 10818776 | Nanosheet transistor with optimized junction and cladding detectivity control | Kangguo Cheng, Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2020-10-27 |