Issued Patents All Time
Showing 26–50 of 262 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11804522 | Sidewall epitaxy encapsulation for nanosheet I/O device | Ruqiang Bao | 2023-10-31 |
| 11757036 | Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devices | Ruilong Xie, Chen Zhang, Julien Frougier, Alexander Reznicek | 2023-09-12 |
| 11562906 | Low resistance source drain contact formation with trench metastable alloys and laser annealing | Oleg Gluschenkov, Zuoguang Liu, Hiroaki Niimi, Tenko Yamashita, Chun-Chen Yeh | 2023-01-24 |
| 11520768 | Vertical transistor and method of forming the vertical transistor | Fee Li Lie, Junli Wang | 2022-12-06 |
| 11482612 | Vertical transistor having bottom spacers on source/drain regions with different heights along junction region | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2022-10-25 |
| 11476362 | Vertical transistors with various gate lengths | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2022-10-18 |
| 11424343 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2022-08-23 |
| 11380778 | Vertical fin field effect transistor devices with self-aligned source and drain junctions | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2022-07-05 |
| 11355649 | Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2022-06-07 |
| 11316015 | Silicon germanium FinFET with low gate induced drain leakage current | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2022-04-26 |
| 11276781 | Bottom source/drain for fin field effect transistors | Heng Wu, Gen Tsutsui, Kangguo Cheng | 2022-03-15 |
| 11276576 | Gate metal patterning to avoid gate stack attack due to excessive wet etching | Junli Wang, Alexander Reznicek, Joshua M. Rubin | 2022-03-15 |
| 11257934 | Fin field-effect transistors with enhanced strain and reduced parasitic capacitance | Kangguo Cheng, Juntao Li, Choonghyun Lee | 2022-02-22 |
| 11244870 | Maskless top source/drain epitaxial growth on vertical transport field effect transistor | Choonghyun Lee, Injo Ok, Soon-Cheon Seo | 2022-02-08 |
| 11239360 | Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy | Brent A. Anderson, Hemanth Jagannathan, Junli Wang | 2022-02-01 |
| 11227937 | Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2022-01-18 |
| 11222981 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Peng Xu, Nicolas Loubet | 2022-01-11 |
| 11189724 | Method of forming a top epitaxy source/drain structure for a vertical transistor | Dexin Kong, Kangguo Cheng | 2021-11-30 |
| 11183427 | Differing device characteristics on a single wafer by selective etch | Huimei Zhou, Gen Tsutsui, Ruqiang Bao | 2021-11-23 |
| 11183583 | Vertical transport FET with bottom source and drain extensions | Pietro Montanini | 2021-11-23 |
| 11183593 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Peng Xu, Nicolas Loubet | 2021-11-23 |
| 11164958 | Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions | Nicolas Loubet, Zhenxing Bi, Richard A. Conti | 2021-11-02 |
| 11164947 | Wrap around contact formation for VTFET | Heng Wu, Ruilong Xie, Lan Yu | 2021-11-02 |
| 11145555 | Gate-last process for vertical transport field-effect transistor | Choonghyun Lee, Hemanth Jagannathan | 2021-10-12 |
| 11088280 | Transistor and method of forming same | Veeraraghavan S. Basker, Nicolas L. Breil, Oleg Gluschenkov, Alexander Reznicek | 2021-08-10 |