KC

Kangguo Cheng

IBM: 2575 patents #1 of 70,183Top 1%
Globalfoundries: 269 patents #3 of 4,424Top 1%
TE Tessera: 34 patents #14 of 271Top 6%
SS Stmicroelectronics Sa: 19 patents #57 of 1,676Top 4%
AS Adeia Semiconductor Solutions: 13 patents #1 of 57Top 2%
ET Elpis Technologies: 12 patents #1 of 121Top 1%
CEA: 6 patents #716 of 7,956Top 9%
GU Globalfoundries U.S.: 5 patents #206 of 665Top 35%
Samsung: 5 patents #22,466 of 75,807Top 30%
RE Renesas Electronics: 4 patents #1,016 of 4,529Top 25%
IB International Business: 1 patents #4 of 119Top 4%
📍 Schenectady, NY: #1 of 1,353 inventorsTop 1%
🗺 New York: #1 of 115,490 inventorsTop 1%
Overall (All Time): #5 of 4,157,543Top 1%
2819
Patents All Time

Issued Patents All Time

Showing 26–50 of 2,819 patents

Patent #TitleCo-InventorsDate
12336279 Fin stack including tensile-strained and compressively strained fin portions Julien Frougier, Ruilong Xie, Chanro Park 2025-06-17
12328916 CPP-agnostic source-drain contact formation for gate-all-around devices with dielectric isolation Julien Frougier, Ruilong Xie, Chanro Park, Oleg Gluschenkov 2025-06-10
12327798 Physical unclonable function Eric R. Miller, Fee Li Lie, Gauri Karve, Marc A. Bergendahl, John R. Sporre 2025-06-10
12324234 Fork sheet device with better electrostatic control Ruilong Xie, Julien Frougier, Chanro Park 2025-06-03
12324197 Spin-based gate-all-around transistors Julien Frougier, Ruilong Xie, Chanro Park, Andrew Gaul, Min Gyu Sung 2025-06-03
12324184 Replacement gate cross-couple for static random-access memory scaling Ruilong Xie, Carl Radens, Veeraraghavan S. Basker, Juntao Li 2025-06-03
12317514 Resistive random-access memory structures with stacked transistors Min Gyu Sung, Julien Frougier, Ruilong Xie, Chanro Park, Soon-Cheon Seo 2025-05-27
12317509 Stacked spin-orbit-torque magnetoresistive random-access memory Julien Frougier, Dimitri Houssameddine, Ruilong Xie 2025-05-27
12317763 Memory cell with comb-shaped electrodes Juntao Li, Carl Radens, Ruilong Xie 2025-05-27
12317762 Vertical phase change memory device Juntao Li, Carl Radens, Ruilong Xie 2025-05-27
12310262 Phase change memory with encapsulated phase change element Dexin Kong, Juntao Li, Zheng Xu 2025-05-20
12310267 ReRAM module with intermediate electrode Juntao Li, Kevin W. Brew, Dexin Kong 2025-05-20
12310064 Isolation pillar structures for stacked device structures Ruilong Xie, Julien Frougier, Chanro Park, Min Gyu Sung 2025-05-20
12310061 Nanosheet transistor devices with different active channel widths Ruilong Xie, Julien Frougier, Chanro Park, Cheng Chi, Jinning Liu 2025-05-20
12310265 Dome-shaped phase change memory mushroom cell Juntao Li, LOUIS ZUOGUANG LIU, Arthur Roy Gasasira 2025-05-20
12279452 Stacked complementary transistor structure for three-dimensional integration Shogo Mochizuki, Juntao Li 2025-04-15
12274185 Phase change memory cell having pillar bottom electrode with improved thermal insulation Juntao Li, Ruilong Xie, Carl Radens 2025-04-08
12274186 Low current phase-change memory device Juntao Li, Ruilong Xie, Julien Frougier 2025-04-08
12262549 Transistor device having a comb-shaped channel region to increase the effective gate width 2025-03-25
12256554 Embedded MRAM integrated with super via and dummy fill Ruilong Xie, Dimitri Houssameddine, Julien Frougier 2025-03-18
12255651 Reconfigurable ring oscillator (RO) physical unclonable function (PUF) Julien Frougier, Carl Radens, Ruilong Xie 2025-03-18
12256653 PCM cell with nanoheater surrounded with airgaps Juntao Li, Dexin Kong, Ruilong Xie 2025-03-18
12245517 MRAM stack with reduced height Ruilong Xie, Dimitri Houssameddine, Julien Frougier, Bruce B. Doris 2025-03-04
12245530 Phase change memory with concentric ring-shaped heater Carl Radens, Juntao Li, Ruilong Xie, Praneet Adusumilli, Oscar van der Straten +1 more 2025-03-04
12237328 Minimizing shorting between FinFET epitaxial regions Balasubramanian Pranatharthiharan, Alexander Reznicek, Charan V. Surisetty 2025-02-25