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Home › Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions

Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions

US Patent 9941301 · Granted Apr 10, 2018

Estimated economic value: $10,802,000 ⓘ

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