Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12356675 | Planar transistor device comprising at least one layer of a two-dimensional (2D) material | David Pritchard, Heng Yang, Hongru Ren, Manjunatha Prabhu, Elizabeth Strehlow +1 more | 2025-07-08 |
| 11581430 | Planar transistor device comprising at least one layer of a two-dimensional (2D) material and methods for making such transistor devices | David Pritchard, Heng Yang, Hongru Ren, Manjunatha Prabhu, Elizabeth Strehlow +1 more | 2023-02-14 |
| 11239087 | Fully depleted devices with slots in active regions | Heng Yang, David Pritchard, George J. Kluth, Anurag Mittal, Hongru Ren +3 more | 2022-02-01 |
| 11177182 | Vertical transistor device comprising a two-dimensional (2D) material positioned in a channel region of the device and methods of making such vertical transistor devices | Heng Yang, David Pritchard, Kai Sun, Hongru Ren, Manjunatha Prabhu +2 more | 2021-11-16 |
| 11094791 | Vertical transistor device with source/drain regions comprising a twi-dimensional (2D) material and methods of making such vertical transistor devices | Heng Yang, David Pritchard, Kai Sun, Hongru Ren, Manjunatha Prabhu +2 more | 2021-08-17 |
| 10691862 | Layouts for connecting contacts with metal tabs or vias | Daniel James Dechene, David Pritchard, George J. Kluth | 2020-06-23 |
| 10566384 | Two pass MRAM dummy solution | Wanbing Yi, Curtis Chun-I Hsieh, Mahesh Bhatkar, Wenjun Liu, Juan Boon Tan | 2020-02-18 |
| 10497576 | Devices with slotted active regions | Heng Yang, David Pritchard, George J. Kluth, Anurag Mittal, Hongru Ren +3 more | 2019-12-03 |
| 10186524 | Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions | David Pritchard, Lixia Lei, Deniz E. Civay, Scott Luning | 2019-01-22 |
| 10158066 | Two pass MRAM dummy solution | Wanbing Yi, Curtis Chun-I Hsieh, Mahesh Bhatkar, Wenjun Liu, Juan Boon Tan | 2018-12-18 |
| 9941301 | Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions | David Pritchard, Lixia Lei, Deniz E. Civay, Scott Luning | 2018-04-10 |