Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12424493 | Self-aligned double patterning with mandrel manipulation | James P. Mazza, David Pritchard, Romain H.A. Feuillette, Hongru Ren | 2025-09-23 |
| 12356675 | Planar transistor device comprising at least one layer of a two-dimensional (2D) material | David Pritchard, Heng Yang, Hongru Ren, Neha Nayyar, Manjunatha Prabhu +1 more | 2025-07-08 |
| 12046651 | Logic cell layout design for high density transistors | James P. Mazza, Motoi Ichihashi, Xuelian Zhu, Jia Zeng | 2024-07-23 |
| 11913971 | Motion-sensitive field effect transistor, motion detection system, and method | Romain H.A. Feuillette, David Pritchard, James P. Mazza | 2024-02-27 |
| 11722298 | Public-private encryption key generation using Pcell parameter values and on-chip physically unclonable function values | Romain H.A. Feuillette, David Pritchard, Bernhard J. Wunder | 2023-08-08 |
| 11581430 | Planar transistor device comprising at least one layer of a two-dimensional (2D) material and methods for making such transistor devices | David Pritchard, Heng Yang, Hongru Ren, Neha Nayyar, Manjunatha Prabhu +1 more | 2023-02-14 |
| 11567266 | Angled grating couplers with inclined side edge portions | Judson R. Holt, Yusheng Bian, Qizhi Liu | 2023-01-31 |
| 11276651 | IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure | Anton V. Tokranov, Kai Sun, James P. Mazza, David Pritchard, Heng Yang +1 more | 2022-03-15 |
| 11205648 | IC structure with single active region having different doping profile than set of active regions | Anton V. Tokranov, James P. Mazza, Harold Mendoza, Jay Mody, Clynn J. Mathew +2 more | 2021-12-21 |
| 11177182 | Vertical transistor device comprising a two-dimensional (2D) material positioned in a channel region of the device and methods of making such vertical transistor devices | Heng Yang, David Pritchard, Kai Sun, Hongru Ren, Neha Nayyar +2 more | 2021-11-16 |
| 11094791 | Vertical transistor device with source/drain regions comprising a twi-dimensional (2D) material and methods of making such vertical transistor devices | Heng Yang, David Pritchard, Kai Sun, Hongru Ren, Neha Nayyar +2 more | 2021-08-17 |