Issued Patents All Time
Showing 51–74 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6646307 | MOSFET having a double gate | Bin Yu | 2003-11-11 |
| 6638861 | Method of eliminating voids in W plugs | Minh Van Ngo | 2003-10-28 |
| 6632729 | Laser thermal annealing of high-k gate oxide layers | — | 2003-10-14 |
| 6605513 | Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing | Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski, John Foster +4 more | 2003-08-12 |
| 6602781 | Metal silicide gate transistors | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Paul L. King | 2003-08-05 |
| 6562718 | Process for forming fully silicided gates | Qi Xiang, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +5 more | 2003-05-13 |
| 6559051 | Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Matthew S. Buynoski, Paul R. Besser, Paul L. King, Qi Xang | 2003-05-06 |
| 6555439 | Partial recrystallization of source/drain region before laser thermal annealing | Qi Xiang, Robert B. Ogle, Cyrus E. Tabery, Bin Yu | 2003-04-29 |
| 6551888 | Tuning absorption levels during laser thermal annealing | Cyrus E. Tabery, Bin Yu, Qi Xiang, Robert B. Ogle | 2003-04-22 |
| 6536370 | Elapsed time indicator for controlled environments and method of use | Balaraman Mani | 2003-03-25 |
| 6514859 | Method of salicide formation with a double gate silicide | Jeff P. Erhardt | 2003-02-04 |
| 6475874 | Damascene NiSi metal gate high-k transistor | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Paul L. King | 2002-11-05 |
| 6465309 | Silicide gate transistors | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Paul L. King | 2002-10-15 |
| 6465334 | Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Matthew S. Buynoski, Paul R. Besser, Paul L. King, Qi Xiang | 2002-10-15 |
| 6458679 | Method of making silicide stop layer in a damascene semiconductor structure | Paul R. Besser, Matthew S. Buynoski, Qi Xiang, Paul L. King, John Foster | 2002-10-01 |
| 6432805 | Co-deposition of nitrogen and metal for metal silicide formation | Minh Van Ngo, Paul R. Besser | 2002-08-13 |
| 6399467 | Method of salicide formation | Jeff P. Erhardt | 2002-06-04 |
| 6387786 | Method of salicide formation by siliciding a gate area prior to siliciding a source and drain area | Jeff P. Erhardt | 2002-05-14 |
| 6368950 | Silicide gate transistors | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Paul L. King | 2002-04-09 |
| 6342414 | Damascene NiSi metal gate high-k transistor | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Paul L. King | 2002-01-29 |
| 6300203 | Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Matthew S. Buynoski, Paul R. Besser, Qi Xang, Paul L. King | 2001-10-09 |
| 6297107 | High dielectric constant materials as gate dielectrics | Matthew S. Byunoski, Paul R. Besser, Paul L. King, Qi Xiang | 2001-10-02 |
| 6297159 | Method and apparatus for chemical polishing using field responsive materials | — | 2001-10-02 |
| 6048790 | Metalorganic decomposition deposition of thin conductive films on integrated circuits using reducing ambient | John A. Iacoponi | 2000-04-11 |