Maria C. Chan — 17 Patents at AMD

Maria C. Chan has been granted 17 US patents while listed as an inventor at AMD. The first was granted in 1999 and the most recent in March 2006. Maria C. Chan ranks #263,971 of 4,157,543 US inventors in our database (top 6.3%). Patent records list Maria C. Chan in San Jose, CA, US.

Patents per Year

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Showing 1–17 of 17 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
7012008	Dual spacer process for non-volatile memory devices	Jeffrey A. Shields, Tuan Pham, Mark T. Ramsbey, Yu Sun, Angela T. Hui	2006-03-14	$17,128,000
6610580	Flash memory array and a method and system of fabrication thereof	Hao Fang, Mark S. Chang, Mike Templeton	2003-08-26	$4,773,000
6603211	Method and system for providing a robust alignment mark at thin oxide layers	Michael K. Templeton, Hao Fang, King Wai Kelwin Ko	2003-08-05	$3,941,000
6593245	Silicon nitride etch process with critical dimension gain	—	2003-07-15	$1,952,000
6495435	Method for improved control of lines adjacent to a select gate using a mask assist feature	Michael K. Templeton, Hao Fang	2002-12-17	$3,175,000
6455888	Memory cell structure for elimination of oxynitride (ONO) etch residue and polysilicon stringers	Kathleen R. Early, Michael K. Templeton, Nicholas H. Tripsas	2002-09-24	$1,057,000
6448594	Method and system for processing a semiconductor device	Hao Fang, Lu You, Mark S. Chang, King Wai Kelwin Ko	2002-09-10	$1,244,000
6352930	Bilayer anti-reflective coating and etch hard mask	Kathleen R. Early, Suzette K. Pangrle, Lewis Shen	2002-03-05	$11,927,000
6306706	Method and system for fabricating a flash memory array	Hao Fang, Mark S. Chang	2001-10-23	$2,669,000
6232002	Bilayer anti-reflective coating and etch hard mask	Kathleen R. Early, Suzette K. Pangrle, Lewis Shen	2001-05-15	$7,906,000
6110833	Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation	Kathleen R. Early, Michael K. Templeton, Nicholas H. Tripsas	2000-08-29	$7,735,000
6087271	Methods for removal of an anti-reflective coating following a resist protect etching process	William G. En, Minh Van Ngo, Olov Karlsson, Christopher F. Lyons	2000-07-11	$9,020,000
6046085	Elimination of poly stringers with straight poly profile	—	2000-04-04	$6,962,000
6043120	Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation	Kathleen R. Early, Michael K. Templeton, Nicholas H. Tripsas	2000-03-28	$9,076,000
6030868	Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation	Kathleen R. Early, Michael K. Templeton, Nicholas H. Tripsas, Mark T. Ramsbey	2000-02-29	$3,732,000
6027959	Methods for in-situ removal of an anti-reflective coating during a nitride resistor protect etching process	William G. En, Minh Van Ngo, Olov Karlsson	2000-02-22	$6,407,000
5933729	Reduction of ONO fence during self-aligned etch to eliminate poly stringers	—	1999-08-03	$2,588,000

Maria C. Chan — 17 Patents

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