Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation

Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation

US Patent 6043120 · Granted Mar 28, 2000

Estimated economic value: $9,076,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Buried silicide local interconnect with sidewall spacers and method for making t2013
Test structures for development of metal-insulator-metal (MIM) devices2011
Buried silicide local interconnect with sidewall spacers and method for making t2011
Semiconductor device built on plastic substrate2011
Processing a copolymer to form a polymer memory cell2011
Stacked organic memory devices and methods of operating and fabricating2011
Inverse resist coating process2011
Buried silicide local interconnect with sidewall spacers and method for making t2010
Memory device with a selection element and a control line in a substantially sim2010
Nitridation of gate oxide by laser processing2010
System and method for processing an organic memory cell2009
Methods and systems for recovering data in a nonvolatile memory array2009