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Home › Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation

Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation

US Patent 6030868 · Granted Feb 29, 2000

Estimated economic value: $3,732,000 ⓘ

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