Issued Patents All Time
Showing 25 most recent of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6878622 | Method for forming SAC using a dielectric as a BARC and FICD enlarger | Wenge Yang, Ramkumar Subramanian, Fei Wang | 2005-04-12 |
| 6867097 | Method of making a memory cell with polished insulator layer | Mark T. Ramsbey, Robert B. Ogle, Tommy Hsiao, Angela T. Hui, Tuan Pham +1 more | 2005-03-15 |
| 6586339 | Silicon barrier layer to prevent resist poisoning | Marina V. Plat, Robert B. Ogle | 2003-07-01 |
| 6534411 | Method of high density plasma metal etching | Wenge Yang | 2003-03-18 |
| 6515328 | Semiconductor devices with reduced control gate dimensions | Wenge Yang, Mark S. Chang | 2003-02-04 |
| 6452225 | Method and structure of etching a memory cell polysilicon gate layer using resist mask and etched silicon oxynitride | Wenge Yang | 2002-09-17 |
| 6383939 | Method for etching memory gate stack using thin resist layer | Wenge Yang | 2002-05-07 |
| 6372651 | Method for trimming a photoresist pattern line for memory gate etching | Wenge Yang | 2002-04-16 |
| 6365509 | Semiconductor manufacturing method using a dielectric photomask | Ramkumar Subramanian, Wenge Yang, Marina V. Plat | 2002-04-02 |
| 6355546 | Thermally grown protective oxide buffer layer for ARC removal | Richard J. Huang | 2002-03-12 |
| 6352930 | Bilayer anti-reflective coating and etch hard mask | Kathleen R. Early, Suzette K. Pangrle, Maria C. Chan | 2002-03-05 |
| 6291329 | Protective oxide buffer layer for ARC removal | Richard J. Huang | 2001-09-18 |
| 6271154 | Methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profile | Wenge Yang | 2001-08-07 |
| 6232002 | Bilayer anti-reflective coating and etch hard mask | Kathleen R. Early, Suzette K. Pangrle, Maria C. Chan | 2001-05-15 |
| 6218310 | RTA methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profile | Wenge Yang | 2001-04-17 |
| 6174819 | Low temperature photoresist removal for rework during metal mask formation | Jeffrey A. Shields, Anne E. Sanderfer | 2001-01-16 |
| 6159794 | Methods for removing silicide residue in a semiconductor device | Wenge Yang | 2000-12-12 |
| 6159860 | Method for etching layers on a semiconductor wafer in a single etching chamber | Wenge Yang | 2000-12-12 |
| 6110779 | Method and structure of etching a memory cell polysilicon gate layer using resist mask and etched silicon oxynitride | Wenge Yang | 2000-08-29 |
| 6074956 | Method for preventing silicide residue formation in a semiconductor device | Wenge Yang | 2000-06-13 |
| 6025268 | Method of etching conductive lines through an etch resistant photoresist mask | — | 2000-02-15 |
| 6011289 | Metal oxide stack for flash memory application | Richard J. Huang | 2000-01-04 |
| 5977601 | Method for etching memory gate stack using thin resist layer | Wenge Yang | 1999-11-02 |
| 5973353 | Methods and arrangements for forming a tapered floating gate in non-volatile memory semiconductor devices | Wenge Yang | 1999-10-26 |
| 5948703 | Method of soft-landing gate etching to prevent gate oxide damage | Wenge Yang | 1999-09-07 |