Issued Patents All Time
Showing 26–50 of 100 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6936515 | Method for fabricating a memory device having reverse LDD | Hiroyuki Ogawa, Angela T. Hui | 2005-08-30 |
| 6927129 | Narrow wide spacer | Kuo-Tung Chang, Angela T. Hui, Shenqing Fang | 2005-08-09 |
| 6900085 | ESD implant following spacer deposition | Mark T. Ramsbey, Michael Fliesler, Mark Randolph, Mimi Qian | 2005-05-31 |
| 6808992 | Method and system for tailoring core and periphery cells in a nonvolatile memory | Kelwin Ko, Shenqing Fang, Angela T. Hui, Hiroyuki Kinoshita, Wenmei Li +1 more | 2004-10-26 |
| 6808996 | Method for protecting gate edges from charge gain/loss in semiconductor device | Tuan Pham, Mark T. Ramsbey, Sameer Haddad, Angela T. Hui, Chi Chang | 2004-10-26 |
| 6787840 | Nitridated tunnel oxide barriers for flash memory technology circuitry | Tuan Pham, Mark T. Ramsbey, Chi Chang | 2004-09-07 |
| 6780708 | METHOD OF FORMING CORE AND PERIPHERY GATES INCLUDING TWO CRITICAL MASKING STEPS TO FORM A HARD MASK IN A CORE REGION THAT INCLUDES A CRITICAL DIMENSION LESS THAN ACHIEVABLE AT A RESOLUTION LIMIT OF LITHOGRAPHY | Hiroyuki Kinoshita, Basab Banerjee, Christopher Foster, John R. Behnke, Cyrus E. Tabery | 2004-08-24 |
| 6737703 | Memory array with buried bit lines | Richard Fastow, Sameer Haddad | 2004-05-18 |
| 6730564 | Salicided gate for virtual ground arrays | Mark T. Ramsbey, Chi Chang, Hidehiko Shiraiwa | 2004-05-04 |
| 6727143 | Method and system for reducing charge gain and charge loss when using an ARC layer in interlayer dielectric formation | Angela T. Hui, Mark T. Ramsbey, David Matsumoto | 2004-04-27 |
| 6680509 | Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory | Yider Wu, Jean Y. Yang, Mark T. Ramsbey, Emmanuel H. Lingunis | 2004-01-20 |
| 6664191 | Non self-aligned shallow trench isolation process with disposable space to define sub-lithographic poly space | Unsoon Kim, Yider Wu, Michael K. Templeton, Angela T. Hui, Chi Chang | 2003-12-16 |
| 6645801 | Salicided gate for virtual ground arrays | Mark T. Ramsbey, Chi Chang | 2003-11-11 |
| 6630384 | Method of fabricating double densed core gates in sonos flash memory | Michael A. Van Buskirk, Mark T. Ramsbey | 2003-10-07 |
| 6605511 | Method of forming nitridated tunnel oxide barriers for flash memory technology circuitry and STI and LOCOS isolation | Tuan Pham, Mark T. Ramsbey, Chi Chang | 2003-08-12 |
| 6583009 | Innovative narrow gate formation for floating gate flash technology | Angela T. Hui, Kelwin Ko, Hiroyuki Kinoshita, Sameer Haddad | 2003-06-24 |
| 6566194 | Salicided gate for virtual ground arrays | Mark T. Ramsbey, Chi Chang | 2003-05-20 |
| 6566736 | Die seal for semiconductor device moisture protection | Hiroyuki Ogawa, Yider Wu | 2003-05-20 |
| 6529412 | Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge | Pau-Ling Chen, Michael A. Van Buskirk | 2003-03-04 |
| 6509604 | Nitridation barriers for nitridated tunnel oxide for circuitry for flash technology and for LOCOS/STI isolation | Tuan Pham, Mark T. Ramsbey, Chi Chang | 2003-01-21 |
| 6509232 | Formation of STI (shallow trench isolation) structures within core and periphery areas of flash memory device | Unsoon Kim, Mark S. Chang, Yider Wu, Chi Chang, Angela T. Hui | 2003-01-21 |
| 6509229 | Method for forming self-aligned contacts using consumable spacers | Fei Wang, Ramkumar Subramanian | 2003-01-21 |
| 6482699 | Method for forming self-aligned contacts and local interconnects using decoupled local interconnect process | YongZhong Hu, Fei Wang, Wenge Yang, Ramkumar Subramanian | 2002-11-19 |
| 6475847 | Method for forming a semiconductor device with self-aligned contacts using a liner oxide layer | Minh Van Ngo, Fei Wang, Mark T. Ramsbey, Chi Chang, Angela T. Hui +1 more | 2002-11-05 |
| 6455373 | Semiconductor device having gate edges protected from charge gain/loss | Tuan Pham, Mark T. Ramsbey, Sameer Haddad, Angela T. Hui, Chi Chang | 2002-09-24 |