| 8271810 |
Method and apparatus for dynamically detecting environmental conditions and adjusting drive strength in response to the detecting |
David Lindley, Morgan Whately, Vinod Rajan, Muthukumar Nagarajan, Jun Li +1 more |
2012-09-18 |
| 7173851 |
3.5 transistor non-volatile memory cell using gate breakdown phenomena |
John M. Callahan, Hemanshu T. Vernenker, Glen Arnold Rosendale, Harry Luan, Zhongshang Liu |
2007-02-06 |
| 7042772 |
Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric |
Jianguo Wang, David Fong, Jack Peng, Fei Ye |
2006-05-09 |
| 7031209 |
Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric |
Jianguo Wang, David Fong, Jack Peng, Fei Ye |
2006-04-18 |
| 6972986 |
Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown |
Jack Peng, Zhongshan Liu, Fei Ye |
2005-12-06 |
| 6940751 |
High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown |
Jack Peng |
2005-09-06 |
| 6900085 |
ESD implant following spacer deposition |
Mark T. Ramsbey, Mark Randolph, Mimi Qian, Yu Sun |
2005-05-31 |
| 6770938 |
Diode fabrication for ESD/EOS protection |
Mark T. Ramsbey, Mark Randolph, Ian Morgan, Timothy Thurgate, Paohua Kuo +1 more |
2004-08-03 |
| 6440789 |
Photoresist spacer process simplification to eliminate the standard polysilicon or oxide spacer process for flash memory circuits |
Darlene Hamilton, Len Toyoshiba |
2002-08-27 |
| 6395568 |
Method and apparatus for achieving bond pad crater sensing and ESD protection integrated circuit products |
Richard C. Blish, II, Colin Hatchard, Ian Morgan |
2002-05-28 |
| 6238975 |
Method for improving electrostatic discharge (ESD) robustness |
Mark Randolph |
2001-05-29 |
| 5642311 |
Overerase correction for flash memory which limits overerase and prevents erase verify errors |
Lee Cleveland, Chung K. Chang, Yuan Tang, Nancy Leong, Tiao-Hua Kuo |
1997-06-24 |
