| 11817171 |
Devices for providing neutral voltage conditions for resistive change elements in resistive change element arrays |
Takao Akaogi, Jia Luo |
2023-11-14 |
|
| 8559255 |
Controlling AC disturbance while programming |
Sung-Yong Chung, Zhizheng Liu, Yugi Mizuguchi, Xuguang Wang, Yi He +4 more |
2013-10-15 |
$1,726,000 |
| 8264898 |
Controlling AC disturbance while programming |
Sung-Yong Chung, Zhizheng Liu, Yugi Mizuguchi, Xuguang Wang, Yi He +4 more |
2012-09-11 |
$2,045,000 |
| 8107294 |
Read mode for flash memory |
Hounien Chen |
2012-01-31 |
$2,854,000 |
| 7986562 |
Controlling AC disturbance while programming |
Sung-Yong Chung, Zhizheng Liu, Yugi Mizuguchi, Xuguang Wang, Yi He +4 more |
2011-07-26 |
$2,685,000 |
| 7706183 |
Read mode for flash memory |
Hounien Chen |
2010-04-27 |
|
| 7679967 |
Controlling AC disturbance while programming |
Sung-Yong Chung, Zhizheng Liu, Yugi Mizuguchi, Xuguang Wang, Yi He +4 more |
2010-03-16 |
|
| 7453724 |
Flash memory device having improved program rate |
Aaron Lee, Hounien Chen, Sachit Chandra, Guowei Wang |
2008-11-18 |
$1,078,000 |
| 7443732 |
High performance flash memory device capable of high density data storage |
Tiao-Hua Kuo, Nian Yang, Guowei Wang, Aaron Lee, Sachit Chandra +4 more |
2008-10-28 |
$449,000 |
| 7433228 |
Multi-bit flash memory device having improved program rate |
Tiao-Hua Kuo, Hounien Chen, Sachit Chandra, Nian Yang |
2008-10-07 |
$1,267,000 |
| 7423915 |
Random cache read using a double memory |
Sachit Chandra, Hounien Chen |
2008-09-09 |
$3,225,000 |
| 7342830 |
Program and program verify operations for flash memory |
Hounien Chen |
2008-03-11 |
$4,119,000 |
| 7307878 |
Flash memory device having improved program rate |
Aaron Lee, Hounien Chen, Sachit Chandra, Guowei Wang |
2007-12-11 |
$706,000 |
| 6633949 |
Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture |
Tiao-Hua Kuo, Yasushi Kasa, Johnny C. Chen, Michael Van Buskirk |
2003-10-14 |
$7,133,000 |
| 6571307 |
Multiple purpose bus for a simultaneous operation flash memory device |
Tiao-Hua Kuo, Takao Akagoi, Yasushi Kasa |
2003-05-27 |
$3,164,000 |
| 6470414 |
Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture |
Tiao-Hua Kuo, Yasushi Kasa, Johnny C. Chen, Michael A. Van Buskirk |
2002-10-22 |
$2,399,000 |
| 6463516 |
Variable sector size for a high density flash memory device |
Johnny C. Chen, Tiao-Hua Kuo, Kazuhiro Kurihara |
2002-10-08 |
$890,000 |
| 6275894 |
Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture |
Tiao-Hua Kuo, Yasushi Kasa, Johnny C. Chen, Michael A. Van Buskirk |
2001-08-14 |
$3,163,000 |
| 6208558 |
Acceleration circuit for fast programming and fast chip erase of non-volatile memory |
Johnny C. Chen, Tiao-Hua Kuo |
2001-03-27 |
$5,495,000 |
| 6157567 |
Unlock bypass program mode for non-volatile memory |
Tiao-Hua Kuo, Eric Itakura, May Xie |
2000-12-05 |
$3,995,000 |
| 6125056 |
Fast program mode for non-volatile memory |
Johnny C. Chen, Tiao-Hua Kuo |
2000-09-26 |
$6,800,000 |
| 6125058 |
System for optimizing the equalization pulse of a read sense amplifier for a simultaneous operation flash memory device |
Tiao-Hua Kuo, Takao Akaogi, Johnny C. Chen |
2000-09-26 |
$6,800,000 |
| 6101129 |
Fast chip erase mode for non-volatile memory |
Johnny C. Chen, Tiao-Hua Kuo |
2000-08-08 |
$4,885,000 |
| 6033955 |
Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture |
Tiao-Hua Kuo, Yasushi Kasa, Johnny C. Chen, Michael Van Buskirk |
2000-03-07 |
$6,917,000 |
| 6005803 |
Memory address decoding circuit for a simultaneous operation flash memory device with a flexible bank partition architecture |
Tiao-Hua Kuo, Yasushi Kasa, Johnny C. Chen, Michael A. Van Buskirk |
1999-12-21 |
$3,429,000 |
