| 9368206 |
Capacitor arrangements using a resistive switching memory cell structure |
John Dinh, Ming Sang Kwan, Venkatesh P. Gopinath, Derric Lewis, Shane Hollmer +1 more |
2016-06-14 |
| 9099176 |
Resistive switching memory device with diode select |
— |
2015-08-04 |
| 7038948 |
Read approach for multi-level virtual ground memory |
Darlene Hamilton, Fatima Bathul, Masato Horiike, Eugen Gershon |
2006-05-02 |
| 6633949 |
Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture |
Tiao-Hua Kuo, Yasushi Kasa, Nancy Leong, Johnny C. Chen |
2003-10-14 |
| 6381179 |
Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure |
Narbeh Derhacobian, Chi Chang, Daniel Sobek |
2002-04-30 |
| 6356482 |
Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure |
Narbeh Derhacobian, Chi Chang, Daniel Sobek |
2002-03-12 |
| 6033955 |
Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture |
Tiao-Hua Kuo, Yasushi Kasa, Nancy Leong, Johnny C. Chen |
2000-03-07 |
