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Narbeh Derhacobian — 57 Patents

AMD: 39 patents #218 of 9,280Top 3%

ATAdesto Technologies: 12 patents #12 of 52Top 25%

Fujitsu Limited: 6 patents #5,180 of 24,456Top 25%

ALAgate Logic: 2 patents #18 of 48Top 40%

VLVirage Logic: 2 patents #29 of 67Top 45%

ATAdesto Technology: 1 patents #4 of 8Top 50%

Belmont, CA: #23 of 1,494 inventorsTop 2%

California: #6,412 of 386,348 inventorsTop 2%

Overall (All Time): #42,642 of 4,157,543Top 2%

57 Patents All Time

Narbeh Derhacobian has been granted 57 US patents while listed as an inventor at AMD. The first was granted in 1998 and the most recent in October 2019. Narbeh Derhacobian ranks #42,642 of 4,157,543 US inventors in our database (top 1.0%). Patent records list Narbeh Derhacobian in Belmont, CA, US.

Patents per Year

Issued Patents All Time

Showing 1–25 of 57 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
10446747	Methods of operating integrated circuit devices having volatile and nonvolatile memory portions	Shane Hollmer	2019-10-15
9570166	Read operations and circuits for memory devices having programmable elements, including programmable resistance elements	Nad Edward Gilbert, Ishai Naveh	2017-02-14	$1,346,000
9159414	Programmable impedance element circuits and methods	Shane Hollmer, John Dinh	2015-10-13
9007814	Application of relaxation voltage pulses to programmble impedance elements during read operations	—	2015-04-14
8995173	Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements	—	2015-03-31
8947913	Circuits and methods having programmable impedance elements	Ishai Naveh	2015-02-03
8913444	Read operations and circuits for memory devices having programmable elements, including programmable resistance elements	Nad Edward Gilbert, Ishai Naveh	2014-12-16
8822967	Multi-terminal phase change devices	Louis Charles Kordus, II, Antonietta Oliva, Vei-Han Chan	2014-09-02
8687403	Circuits having programmable impedance elements	Shane Hollmer, Ishai Naveh	2014-04-01
8675396	Integrated circuit devices and systems having programmable impedance elements with different response types	Ishai Naveh, Shane Hollmer	2014-03-18
8659926	PMC-based non-volatile CAM	—	2014-02-25
8331128	Reconfigurable memory arrays having programmable impedance elements and corresponding methods	Shane Hollmer	2012-12-11
8320148	PMC-based non-volatile CAM	—	2012-11-27
8294488	Programmable impedance element circuits and methods	Shane Hollmer, John Dinh	2012-10-23
8183551	Multi-terminal phase change devices	Louis Charles Kordus, II, Antonietta Oliva, Vei-Han Chan	2012-05-22
7755389	Reconfigurable logic structures	Colin N. Murphy, Louis Charles Kordus, II, Antonietta Oliva, Vei-Han Chan, Thomas E. Stewart	2010-07-13
7095076	Electrically-alterable non-volatile memory cell	Kim Han, Jaroslav Raszka	2006-08-22	$1,651,000
6788574	Electrically-alterable non-volatile memory cell	Kim Han, Jaroslav Raszka	2004-09-07	$2,544,000
6750157	Nonvolatile memory cell with a nitridated oxide layer	Richard Fastow, Chi Chang	2004-06-15	$4,556,000
6618290	Method of programming a non-volatile memory cell using a baking process	Janet Wang	2003-09-09	$4,832,000
6590811	Higher program VT and faster programming rates based on improved erase methods	Darlene Hamilton, Janet Wang, Kulachet Tanpairoj	2003-07-08	$2,679,000
6567303	Charge injection	Darlene Hamilton, Janet Wang, Tim Thurgate, Michael Han	2003-05-20	$2,116,000
6555436	Simultaneous formation of charge storage and bitline to wordline isolation	Mark T. Ramsbey, Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +3 more	2003-04-29	$1,822,000
6549466	Using a negative gate erase voltage applied in steps of decreasing amounts to reduce erase time for a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure	Michael A. Van Buskirk, Chi Chang, Daniel Sobek	2003-04-15	$2,272,000
6541816	Planar structure for non-volatile memory devices	Mark T. Ramsbey, Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +2 more	2003-04-01	$3,014,000