| 6618290 |
Method of programming a non-volatile memory cell using a baking process |
Narbeh Derhacobian |
2003-09-09 |
$4,832,000 |
| 6590811 |
Higher program VT and faster programming rates based on improved erase methods |
Darlene Hamilton, Narbeh Derhacobian, Kulachet Tanpairoj |
2003-07-08 |
$2,679,000 |
| 6567303 |
Charge injection |
Darlene Hamilton, Narbeh Derhacobian, Tim Thurgate, Michael Han |
2003-05-20 |
$2,116,000 |
| 6555436 |
Simultaneous formation of charge storage and bitline to wordline isolation |
Mark T. Ramsbey, Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +3 more |
2003-04-29 |
$1,822,000 |
| 6541816 |
Planar structure for non-volatile memory devices |
Mark T. Ramsbey, Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +2 more |
2003-04-01 |
$3,014,000 |
| 6490205 |
Method of erasing a non-volatile memory cell using a substrate bias |
Ravi Sunkavalli |
2002-12-03 |
$4,258,000 |
| 6468865 |
Method of simultaneous formation of bitline isolation and periphery oxide |
Jean Y. Yang, Mark T. Ramsbey, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +3 more |
2002-10-22 |
$2,399,000 |
| 6465306 |
Simultaneous formation of charge storage and bitline to wordline isolation |
Mark T. Ramsbey, Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers +3 more |
2002-10-15 |
$861,000 |
| 6465303 |
Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory |
Mark T. Ramsbey, Narbeh Derhacobian, Angela T. Hui, Tuan Pham, Ravi Sunkavalli +1 more |
2002-10-15 |
$861,000 |
| 6459618 |
Method of programming a non-volatile memory cell using a drain bias |
— |
2002-10-01 |
$734,000 |
| 6456533 |
Higher program VT and faster programming rates based on improved erase methods |
Darlene Hamilton, Narbeh Derhacobian, Kulachet Tanpairoj |
2002-09-24 |
$1,057,000 |
| 6456531 |
Method of drain avalanche programming of a non-volatile memory cell |
Sameer Haddad |
2002-09-24 |
$1,057,000 |
| 6456536 |
Method of programming a non-volatile memory cell using a substrate bias |
Daniel Sobek, Timothy Thurgate, Narbeh Derhacobian |
2002-09-24 |
$1,057,000 |
| 6410956 |
Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices |
Vei-Han Chan, Scott Luning, Mark Randolph, Nicholas H. Tripsas, Daniel Sobek +2 more |
2002-06-25 |
$2,000,000 |
| 6331953 |
Intelligent ramped gate and ramped drain erasure for non-volatile memory cells |
Narbeh Derhacobian, Daniel Sobek |
2001-12-18 |
$8,747,000 |
| 6331952 |
Positive gate erasure for non-volatile memory cells |
Narbeh Derhacobian, Ravi Sunkavalli |
2001-12-18 |
$8,747,000 |
| 6269023 |
Method of programming a non-volatile memory cell using a current limiter |
Narbeh Derhacobian, Daniel Sobek, Sameer Haddad |
2001-07-31 |
$5,560,000 |
| 6266281 |
Method of erasing non-volatile memory cells |
Narbeth Derhacobian, Michael A. Van Buskirk, Daniel Sobeck, Chi Chang |
2001-07-24 |
$3,903,000 |
| 6233175 |
Self-limiting multi-level programming states |
Ravi Sunkavalli |
2001-05-15 |
$7,906,000 |
| 6188101 |
Flash EPROM cell with reduced short channel effect and method for providing same |
— |
2001-02-13 |
$5,609,000 |
| 6172909 |
Ramped gate technique for soft programming to tighten the Vt distribution |
Sameer Haddad |
2001-01-09 |
$4,016,000 |
| 6025240 |
Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices |
Vei-Han Chan, Scott Luning, Mark Randolph, Nicholas H. Tripsas, Daniel Sobek +2 more |
2000-02-15 |
$6,005,000 |
| 5888867 |
Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration |
Scott Luning, Vei-Han Chan, Nicholas H. Tripsas |
1999-03-30 |
$2,138,000 |
