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Home › Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory

Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory

US Patent 6465303 · Granted Oct 15, 2002

Estimated economic value: $861,000 ⓘ

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