| 9318373 |
Method and apparatus for protection against process-induced charging |
David Michael Rogers, Mimi Qian, Kwadwo Appiah, Mark Randolph, Michael VanBuskirk +3 more |
2016-04-19 |
$2,645,000 |
| 8673716 |
Memory manufacturing process with bitline isolation |
Mark T. Ramsbey, Jean Y. Yang, Emmanuil Lingunis, Hidehiko Shiraiwa, Yu Sun |
2014-03-18 |
$3,810,000 |
| 8445966 |
Method and apparatus for protection against process-induced charging |
David Michael Rogers, Mimi Qian, Kwadwo Appiah, Mark Randolph, Michael VanBuskirk +3 more |
2013-05-21 |
$1,207,000 |
| 7972948 |
Method for forming bit lines for semiconductor devices |
Weidong Qian, Mark T. Ramsbey |
2011-07-05 |
$8,670,000 |
| 7811915 |
Method for forming bit lines for semiconductor devices |
Weidong Qian, Mark T. Ramsbey |
2010-10-12 |
$2,619,000 |
| 7297592 |
Semiconductor memory with data retention liner |
Minh Van Ngo, Arvind Halliyal, Hidehiko Shiraiwa, Rinji Sugino, Dawn Hopper +1 more |
2007-11-20 |
$6,431,000 |
| 7176113 |
LDC implant for mirrorbit to improve Vt roll-off and form sharper junction |
Nga-Ching Wong, Weidong Qian, Sameer Haddad, Mark Randolph, Mark T. Ramsbey |
2007-02-13 |
$15,804,000 |
| 7163860 |
Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device |
Yun Wu, Mark T. Ramsbey, Jean Y. Yang, Arvind Halliyal, Rinji Sugino +2 more |
2007-01-16 |
$6,080,000 |
| 7060554 |
PECVD silicon-rich oxide layer for reduced UV charging |
Minh Van Ngo, Mark T. Ramsbey, Pei-Yuan Gao |
2006-06-13 |
$11,852,000 |
| 7053446 |
Memory wordline spacer |
Kashmir Sahota, Mark T. Ramsbey |
2006-05-30 |
$15,789,000 |
| 7033957 |
ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices |
Hidehiko Shiraiwa, Mark T. Ramsbey, Inkuk Kang, Jaeyong Park, Rinji Sugino +4 more |
2006-04-25 |
|
| 7023046 |
Undoped oxide liner/BPSG for improved data retention |
Minh Van Ngo, Angela T. Hui, Ning Cheng, Jeyong Park, Jean Y. Yang +3 more |
2006-04-04 |
$14,413,000 |
| 7018868 |
Disposable hard mask for memory bitline scaling |
Jean Y. Yang, Jeff P. Erhardt, Cyrus E. Tabery, Weidong Qian, Mark T. Ramsbey +1 more |
2006-03-28 |
$11,294,000 |
| 7018896 |
UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing |
Minh Van Ngo, Mark T. Ramsbey, Arvind Halliyal, Jaeyong Park, Ning Cheng +6 more |
2006-03-28 |
$11,294,000 |
| 6995423 |
Memory device having a P+ gate and thin bottom oxide and method of erasing same |
Wei Zheng, Chi Chang |
2006-02-07 |
$12,481,000 |
| 6969886 |
ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices |
Jaeyong Park, Hidehiko Shiraiwa, Arvind Halliyal, Jean Y. Yang, Inkuk Kang +1 more |
2005-11-29 |
|
| 6962849 |
Hard mask spacer for sublithographic bitline |
Weidong Qian, Kouros Ghandehari, Taraneh Jamali-Beh, Mark T. Ramsbey, Ashok M. Khathuria |
2005-11-08 |
$6,799,000 |
| 6958511 |
Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen |
Arvind Halliyal, Amir H. Jafarpour, Hidehiko Shiraiwa, Mark T. Ramsbey, Jaeyong Park |
2005-10-25 |
|
| 6955965 |
Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device |
Arvind Halliyal, Hidehiko Shiraiwa, Jean Y. Yang |
2005-10-18 |
|
| 6949481 |
Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device |
Arvind Halliyal, Fred Cheung, Rinji Sugino, Hidehiko Shiraiwa, Jean Y. Yang |
2005-09-27 |
|
| 6927145 |
Bitline hard mask spacer flow for memory cell scaling |
Jean Y. Yang, Mark T. Ramsbey, Jaeyong Park, Emmanuil H. Lingunis |
2005-08-09 |
$9,550,000 |
| 6912163 |
Memory device having high work function gate and method of erasing same |
Wei Zheng, Yun Wu, Hidehiko Shiraiwa, Mark T. Ramsbey |
2005-06-28 |
|
| 6884681 |
Method of manufacturing a semiconductor memory with deuterated materials |
Arvind Halliyal, Minh Van Ngo, Mark T. Ramsbey, Jean Y. Yang, Hidehiko Shiraiwa +1 more |
2005-04-26 |
|
| 6885590 |
Memory device having A P+ gate and thin bottom oxide and method of erasing same |
Wei Zheng, Chi Chang |
2005-04-26 |
$7,241,000 |
| 6872609 |
Narrow bitline using Safier for mirrorbit |
Weidong Qian, Kouros Ghandehari, Taraneh Jamali-Beh |
2005-03-29 |
$4,814,000 |
