Issued Patents All Time
Showing 1–25 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12200872 | Control device for a motor vehicle | Johannes Bock, Johannes Brunner, Christian Walda, Karin Beart | 2025-01-14 |
| 12058809 | Control unit for a motor vehicle and method for producing and measuring the tightness of a control unit | Christian Walda, Johannes Brunner, Johannes Bock, Karin Beart | 2024-08-06 |
| 11177063 | Method for magnetising at least two magnets having different magnetic coercivity | Ralf Hoffmann, Christian Mueller | 2021-11-16 |
| 10324431 | Method for monitoring an electromechanical component of an automation system | Ralf Hoffmann, Sebastian Heinrich, Christian Muller | 2019-06-18 |
| 9368304 | Polarized electromagnetic relay and method for production thereof | Christian Mueller, Ralf Hoffmann | 2016-06-14 |
| 9275815 | Relay having two switches that can be actuated in opposite directions | Ralf Hoffmann, Christian Mueller, Olaf Abel, Thomas Kuehne | 2016-03-01 |
| 9153684 | Semiconductor fuses in a semiconductor device comprising metal gates | Ralf Richter, Kai Frohberg | 2015-10-06 |
| 9034744 | Replacement gate approach for high-k metal gate stacks by avoiding a polishing process for exposing the placeholder material | Ralf Richter, Andy Wei | 2015-05-19 |
| 8951907 | Semiconductor devices having through-contacts and related fabrication methods | Ralf Richter, Holger Schuehrer | 2015-02-10 |
| 8941182 | Buried sublevel metallizations for improved transistor density | Kai Frohberg, Dominik Olligs, Katrin Reiche | 2015-01-27 |
| 8922023 | Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materials | Torsten Huisinga, Ralf Richter, Ronny Pfutzner | 2014-12-30 |
| 8877597 | Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantation | Frank Feustel, Kai Frohberg | 2014-11-04 |
| 8833855 | Vehicle seat having a movable backrest part | Michael Dilsen, Thomas Leneis | 2014-09-16 |
| 8786088 | Semiconductor device including ultra low-K (ULK) metallization stacks with reduced chip-package interaction | Torsten Huisinga, Kai Frohberg, Frank Feustel | 2014-07-22 |
| 8778795 | Metallization systems of semiconductor devices comprising a copper/silicon compound as a barrier material | Ronny Pfuetzner | 2014-07-15 |
| 8772154 | Integrated circuits including barrier polish stop layers and methods for the manufacture thereof | Egon Ronny Pfützner, Carsten Peters | 2014-07-08 |
| 8749330 | Electric contact element and method for producing an electric contact element | Ralf Hoffmann, Peter Sandeck, Martin Wieberger, Peter Braumann, Andreas Koffler +2 more | 2014-06-10 |
| 8716079 | Superior fill conditions in a replacement gate approach by corner rounding based on a sacrificial fill material | Fernando Luiz Koch, Johann Steinmetz | 2014-05-06 |
| 8685807 | Method of forming metal gates and metal contacts in a common fill process | Ronny Pfuetzner, Ralf Richter | 2014-04-01 |
| 8673696 | SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage | Peter Baars, Frank Jakubowski, Marco Lepper, Jana Schlott, Kai Frohberg | 2014-03-18 |
| 8673770 | Methods of forming conductive structures in dielectric layers on an integrated circuit device | Torsten Huisinga, Ronny Pfuetzner | 2014-03-18 |
| 8658509 | Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gates | Ralf Richter, Andy Wei | 2014-02-25 |
| 8536052 | Semiconductor device comprising contact elements with silicided sidewall regions | Kai Frohberg, Katrin Reiche | 2013-09-17 |
| 8497554 | Semiconductor device comprising metal gate structures formed by a replacement gate approach and efuses including a silicide | Andy Wei, Ralf Richter | 2013-07-30 |
| 8492269 | Hybrid contact structure with low aspect ratio contacts in a semiconductor device | Ralf Richter, Torsten Huisinga, Kai Frohberg | 2013-07-23 |