Issued Patents All Time
Showing 25 most recent of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10014279 | Methods of forming 3-D integrated semiconductor devices having intermediate heat spreading capabilities | Thomas Werner, Michael Grillberger | 2018-07-03 |
| 9627317 | Wafer with improved plating current distribution | Thomas Werner, Oliver Aubel | 2017-04-18 |
| 9455232 | Semiconductor structure including a die seal leakage detection material, method for the formation thereof and method including a test of a semiconductor structure | Thomas Werner, Oliver Aubel | 2016-09-27 |
| 9349641 | Wafer with improved plating current distribution | Thomas Werner, Oliver Aubel | 2016-05-24 |
| 9318468 | 3-D integrated semiconductor device comprising intermediate heat spreading capabilities | Thomas Werner, Michael Grillberger | 2016-04-19 |
| 9245860 | Metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom | Kai Frohberg, Thomas Werner | 2016-01-26 |
| 8877597 | Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantation | Jens Heinrich, Kai Frohberg | 2014-11-04 |
| 8859398 | Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge | Tobias Letz, Kai Frohberg | 2014-10-14 |
| 8835303 | Metallization system of a semiconductor device comprising extra-tapered transition vias | Thomas Werner, Kai Frohberg | 2014-09-16 |
| 8828887 | Restricted stress regions formed in the contact level of a semiconductor device | Kai Frohberg, Thomas Werner | 2014-09-09 |
| 8786088 | Semiconductor device including ultra low-K (ULK) metallization stacks with reduced chip-package interaction | Torsten Huisinga, Jens Heinrich, Kai Frohberg | 2014-07-22 |
| 8735237 | Method for increasing penetration depth of drain and source implantation species for a given gate height | Uwe Griebenow, Kai Frohberg, Thomas Werner | 2014-05-27 |
| 8716126 | Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions | Thomas Werner, Peter Baars | 2014-05-06 |
| 8698312 | Semiconductor device including a hybrid metallization layer stack for enhanced mechanical strength during and after packaging | James Werking, Christian Zistl, Peter Huebler | 2014-04-15 |
| 8673087 | Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device | Tobias Letz, Christin Bartsch, Andreas Ott | 2014-03-18 |
| 8440534 | Threshold adjustment for MOS devices by adapting a spacer width prior to implantation | Uwe Griebenow, Jan Hoentschel, Kai Frohberg, Heike Berthold, Katrin Reiche +1 more | 2013-05-14 |
| 8399352 | Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions | Thomas Werner, Peter Baars | 2013-03-19 |
| 8399335 | Sophisticated metallization systems in semiconductors formed by removing damaged dielectric layers after forming the metal features | Torsten Huisinga, Michael Grillberger | 2013-03-19 |
| 8377820 | Method of forming a metallization system of a semiconductor device by using a hard mask for defining the via size | Thomas Werner, Kai Frohberg | 2013-02-19 |
| 8368221 | Hybrid contact structure with low aspect ratio contacts in a semiconductor device | Kai Frohberg, Thomas Werner | 2013-02-05 |
| 8357610 | Reducing patterning variability of trenches in metallization layer stacks with a low-k material by reducing contamination of trench dielectrics | Thomas Werner, Michael Grillberger, Kai Frohberg | 2013-01-22 |
| 8323989 | Test system and method of reducing damage in seed layers in metallization systems of semiconductor devices | Tobias Letz, Frank Koschinsky | 2012-12-04 |
| 8314625 | Built-in compliance in test structures for leakage and dielectric breakdown of dielectric materials of metallization systems of semiconductor devices | Oliver Aubel, Torsten Schmidt | 2012-11-20 |
| 8293641 | Nano imprint technique with increased flexibility with respect to alignment and feature shaping | Robert Seidel, Carsten Peters | 2012-10-23 |
| 8241973 | Method for increasing penetration depth of drain and source implantation species for a given gate height | Uwe Griebenow, Kai Frohberg, Thomas Werner | 2012-08-14 |