Issued Patents All Time
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8673696 | SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage | Peter Baars, Frank Jakubowski, Jens Heinrich, Marco Lepper, Kai Frohberg | 2014-03-18 |
| 7858531 | Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region | Ralf Richter, Joerg Hohage, Michael Finken | 2010-12-28 |