Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness

Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness

US Patent 7381660 · Granted Jun 3, 2008

Estimated economic value: $5,507,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having a self-forming barrier layer at via bottom2024
Semiconductor device having a self-forming barrier layer at via bottom2019
Interlevel conductor pre-fill utilizing selective barrier deposition2019
Interlevel conductor pre-fill utilizing selective barrier deposition2018
Electro-migration enhancing method for self-forming barrier process in copper me2017
Interlevel conductor pre-fill utilizing selective barrier deposition2017
Integrated circuits including selectively deposited metal capping layers on copp2016
Methods of producing integrated circuits with an air gap2016
Electro-migration enhancing method for self-forming barrier process in copper me2016
Copper based nitride liner passivation layers for conductive copper structures2016
Using electroless deposition as a metrology tool to highlight contamination, res2016
Methods of forming a metal cap layer on copper-based conductive structures on an2016