Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High-K gate electrode structure formed after transistor fabrication by using a spacer

High-K gate electrode structure formed after transistor fabrication by using a spacer

US Patent 8883582 · Granted Nov 11, 2014

Estimated economic value: $1,428,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming a semiconductor device and according semiconductor device2017
Semiconductor device comprising contact structures with protection layers formed2017
Semiconductor device comprising contact structures with protection layers formed2017
Semiconductor device comprising a stacked die configuration including an integra2016
Methods for forming protection layers on sidewalls of contact etch stop layers2016
Methods for forming protection layers on sidewalls of contact etch stop layers2016
Metallization system of a semiconductor device including metal pillars having a 2016
Tensile nitride profile shaper etch to provide void free gapfill2015
Contact bars with reduced fringing capacitance in a semiconductor device2015
Integrated circuits with close electrical contacts and methods for fabricating t2015
Semiconductor fuses in a semiconductor device comprising metal gates2015
Field effect transistors for a flash memory comprising a self-aligned charge sto2015