Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming a transistor having a recessed gate electrode structure

Methods of forming a transistor having a recessed gate electrode structure

US Patent 6897114 · Granted May 24, 2005

Estimated economic value: $6,015,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device including a field stop region2025
Composite chitosan-tannin-active agent compositions and methods of making and us2025
Tannin composite fibers2025
Tannin-containing gastrointestinal formulations and methods of use2025
Fluorescent proanthocyanidins2024
Tannin-containing gastrointestinal formulations and methods of use2023
Methods of purifying Mucin2022
Method of manufacturing a semiconductor device by using ion beam technique2021
Tannin-containing gastrointestinal formulations and methods of use2021
Medicinal composition for treating urinary tract infection (UTI)2020
Method for operating a container treatment system with fault diagnosis2019
Tannin-chitosan composites2018